Controlled Synthesis, Processing, and Applications of Structural and Functional Nanomaterials: Poster Session
Sponsored by: ACerS Basic Science Division, ACerS Electronics Division, ACerS Engineering Ceramics Division
Program Organizers: Haitao Zhang, University of North Carolina at Charlotte; Gurpreet Singh, Kansas State University; Kathy Lu, University of Alabama Birmingham; Edward Gorzkowski, Naval Research Laboratory; Jian Shi, Rensselear Polytechnich University; Michael Naguib, Tulane University; Sanjay Mathur, University of Cologne
Tuesday 11:00 AM
October 19, 2021
Room: Exhibit Hall B
Location: Greater Columbus Convention Center
P1-31: Layered Metal Monochalcogenides as Electrodes for Electrochemical Energy Storage Applications: Shakir Bin Mujib1; Gurpreet Singh1; 1Kansas State University
The selection of suitable electrode material is a fundamental step in the development of metal-ion batteries with enhanced performance. Herein, we have explored the feasibility of two dimensional sheets of germanium and tin sulfides and tellurides as promising high-capacity and stable materials for energy storage. GeS, GeTe, SnS, and SnTe with layered structures are prepared via a simple liquid-phase exfoliation approach. As-synthesized 2D nanosheets can effectively increase the electrolyte electrode interface area and facilitate metal ion transport. GeS, GeTe, SnS, and SnTe nanosheets deliver a high areal capacity of 1.76 mAh cm-2 ,1.05 mAh cm-2 , 2.66 mAh cm-2 , 1.22 mAh cm-2 respectively as anodes in lithium-ion batteries (LIBs). Further analysis of these monochalcogenides in sodium-ion batteries (SIBs) and potassium-ion batteries (KIBs) suggest that layered monochalcogenides can be potential anodes in other metal ion batteries as well.
P1-32: Low Temperature Synthesis of Solvothermally Grown Ga2O3 Thin Films on FTO Substrates Enabling Various Functional Applications: Siddhartha Suman1; Mukurala Nagaraju1; Lokanath Mohapatra1; Aditya Bhardwaj1; Ajay Kushwaha1; 1Indian Institute of Technology
Thin film of gallium oxide (β-Ga2O3) were grown on fluorine doped tin oxide (FTO) substrate via a solvothermal approach. This study investigated various synthesis parameters while depositing Ga2O3 thin film on FTO substrate. The analysis using XRD and Raman demonstrates a surprising nature for phase formation at a lower temperature. FESEM based images revealed an interesting morphological characteristic, whereas elemental composition was confirmed by energy dispersive X-ray spectroscopy of the synthesized thin films. Besides, after β-Ga2O3 thin film grown on the FTO substrate were sufficiently thin, these films will be undertaking a major step in unleashing the potential for electronics devices. Results denote that the thin film grown by this technique can be utilized for the development of new multifunctional nanostructures and devices.