Advanced Functional and Structural Thin Films and Coatings: Thin Films and Nanostructures for Optoelectronics II
Sponsored by: TMS Functional Materials Division, TMS: Thin Films and Interfaces Committee
Program Organizers: Adele Carrado, University of Strasbourg; Ramana Chintalapalle, University of Texas at El Paso; Gerald Ferblantier, University of Strasbourg - IUT LP / ICube Laboratory - CNRS; Nancy Michael, University of Texas at Arlington; Karine Mougin, Cnrs, Is2m; Heinz Palkowski, Clausthal University of Technology; Nuggehalli Ravindra, New Jersey Institute of Technology; Vikas Tomar, Purdue University

Thursday 2:00 PM
March 18, 2021
Room: RM 19
Location: TMS2021 Virtual

Session Chair: Ramana Chintalapalle, UTEP; Gerald Ferblantier, ICUBE


2:00 PM  Keynote
Metamaterial Coatings for Tuning Optical and Fluid Wetting Behavior: Shawn Putnam1; 1University of Central Florida
    Recent developments in metamaterial design and manufacturing have allowed scientists and engineers to take advantage of unique wave matter interactions at the nano-scale. These nano-to-macroscale interactions foster unique modes of thermal, optical, electrical, and acoustic energy transport and conversion. The relatively broad length scales are possible (in part) because fundamental Van-Der-Waals forces occur between all matter and the corresponding force fields can be engineered via materials manufacturing at the nano-scale. This talk will overview the fabrication, characterization, and application of thin-film metamaterial coatings for a variety of different technologies. The talk will have a significant focus on the effects of applied tensile strains. For example, the application of strains to metamaterial coatings on soft matter substrates facilitate real-time (dynamic) tuning of the surface energy, resulting in novel behavior such as on-demand super-lyophilic wetting transitions and surface energy gradients for directional fluidic transport.

2:45 PM  
Simulation of Optical Properties for Multilayers from Extreme Ultraviolet to Far Infrared: Leqi Lin1; Nuggehalli Ravindra1; 1New Jersey Institute of Technology
    Optical properties of semiconductors play a critical role in various applications including photonics, optical coatings and energy conversion. The fundamental understanding of the optical properties of semiconductors has grown over the years. However, reliable data of the optical constants of semiconductors, particularly in the infrared range of wavelengths, is severely lacking in the literature. In this overview, a detailed case studies of optical properties for silicon-based structures and Ge-on-Si photodetectors, based on Forouhi-Bloomer dispersion equation, as function of photon energy and thickness are presented. The obtained simulation results with this relation are in good accord with the literature values and are consistent with some well-established relations. Furthermore, the results obtained in this study are helpful for the determination and realization of the optical response for different photon energy and thickness.

3:05 PM  Invited
Localization of Dopants and Optical Properties of Phosphorus Doped Silicon Nanocrystals: Herve Rinnert1; Alaa Eldin Giba1; Fatme Trad1; Mathieu Stoffel1; Xavier Devaux1; Alexandre Bouché1; Michel Vergnat1; Rémi Demoulin2; Etienne Talbot2; Anne-Sophie Royet3; Pablo Acosta Alba3; Sébastien Kerdiles3; 1University of Lorraine, IJL; 2Université de Rouen, GPM; 3Université Grenoble Alpes, CEA
    During the last decades, silicon nanocrystals (Si-NCs) have attracted a great attention due to their size dependent optical properties. Doping appears as a possible route to tune and extent their properties. While doping, co-doping and hyperdoping have been reported by several groups, many fundamental questions remain open. It is indeed highly challenging to control the localization, the quantity and the activity of dopants. Here, the attention is focused on phosphorus doped Si-NCs, obtained by the phase separation process in P-doped SiOx/SiO2 multilayers, deposited by e-beam evaporation. Laser thermal annealing was carried out to improve the dopants activation. It is shown that P doping promotes the phase separation process and plays a strong role on the photoluminescence. The emission properties of doped Si-NCs will be discussed in relation with the P content and the localization of dopants at the nanoscale analyzed by atom probe tomography and scanning transmission electron microscopy.

3:40 PM  
Interface Characteristics in Transparent Optical Nanomultilayers: Danielle White1; Chelsea Appleget1; Andrea Hodge1; 1University of Southern California
    Nanomultilayers are composites with alternating material layers with thicknesses on the nanoscale. The ceramic/ceramic systems examined in this study, AlN/SiO₂, TiO₂/SiO₂, and AlN/Al₂O₃, were selected for their known optical performance. Multilayers were synthesized with optimized layer thicknesses with the goal of achieving an average experimental transmittance > 90% over the UV/Vis to NIR wavelength range. More specifically, layer thicknesses and material selection affect microstructural and interfacial changes such as variations in grain morphology and interface structure, which yield maximized optical properties. The effect on mechanical properties was also investigated.

4:00 PM  
Pulsed-laser Deposition and Optical Characterization of Gallium Oxide (Ga2O3) Thin Films: Vishal Zade1; Nanthkishore Makeswaran1; Ramana Chintalapalle1; 1UTEP
    Gallium oxide (Ga2O3) find interesting applications in a variety of electronic, optical, and optoelectronic devices, such as field effect transistors, switching memories, high temperature gas sensors, photocatalysts, deep-UV photodetector and transparent conducting electrodes. However, understanding the structure-property correlation in (Ga2O3) as a function of processing conditions is the key to realized device-quality films and enhanced performance. In this context, the present work was focused on the deposition of (Ga2O3) films using pulsed-laser deposition and understand the structure, morphology, and optical properties as a function of the deposition temperature, which is varied in the range of 25-600 oC. A more detailed account of the growth behavior, crystal structure, morphology and optical properties of PLD β-Ga2O3 films will be discussed to establish a structure-property correlation.