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Meeting Materials Science & Technology 2016
Symposium Semiconductor Heterostructures: Theory, Growth, Characterization, and Device Applications
Organizer(s) John E. Ayers, University of Connecticut
Scope Topics include the theory of semiconductor heterostructures, including growth modes, equilibrium modeling and the critical layer thickness, plastic flow modeling and kinetically-limited lattice relaxation; growth of semiconductor heterostructures, including vapor phase transport, physical transport, and other techniques; characterization, including in-situ characterization, diffraction, microscopic, electrical, optical, and other techniques; and device applications, including electronics, photonics, energy conversion, and sensors.
Abstracts Due 03/31/2016
Proceedings Plan Planned: Other (journal publication, etc.; describe below)

Electrodeposited Cadmium Selenide Films for Advanced Photovoltaics
Epitaxial Strategies for Thermally Managed High-power Lasers and Photovoltaic Devices
Film Stoichiometry, Intermixing and Surface Conditions in LAO/STO Hetero-interfaces
Influence of Alloy Composition and Strain on Band Alignments at Semiconductor Heterostructures
Novel Circuit Model for InGaAs/GaAs (001) Strained-layer Heterostructures
Preparation of Cu2ZnSnS4 thin films using ppm-level Hydrogen Sulfide
Purification of Ga by Distillation during MBE Growth
Spatially-resolved Band Gap and Defect Level Measurement of Semiconducting Oxide Heterostructures Using High-resolution Electron Microscopy
Thermodynamic Limits on III/V Alloys for Novel Heterostructures
Triple Junction Silicon Solar Cell With Step Graded Si1-xGex Layer

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