|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Recent Developments in Biological, Structural and Functional Thin Films and Coatings
||Barrierless Cu–Ni–M thin films on Silicon Based on the Stable Solid Solution Cluster Model
||Xiaona Li, Yuehong Zheng, Miao Wang, Chuang Dong
|On-Site Speaker (Planned)
In the Ultra Large Scale Integration Cu-low k interconnects, barrierless Cu seed layer doped with insoluble elements has received wide attention because of its low resistivity, high thermal stability and easy preparation. In this paper, [M–Ni12]Cux (M = Fe、Cr、V、Mo、Ti、Nb、Ta、Sn and Zr) thin films were studied. The results showed that the properties of the films were affected by the M/Ni ratios. The stability of these films was improved in varying degrees, and the annealed films (especially close to the Cu at.%=99.7%，M/Ni=1/12) can achieve the low resistivity below 3 μΩ•cm. The results can be explained by the “cluster-plus-glue-atom” model for stable solid solutions, where [M-Ni12] cuboctahedral clusters are embedded in a Cu matrix. In this model, the clusters are congruent with the Cu minimizing atomic interactions allowing a good stability.
||Planned: Supplemental Proceedings volume