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Meeting 2017 TMS Annual Meeting & Exhibition
Symposium Solar Cell Silicon
Presentation Title Influence of Oxygen Content on the Wettability of Silicon on Graphite
Author(s) Zineb Benouahmane, Lifeng Zhang, Yaqiong Li
On-Site Speaker (Planned) Lifeng Zhang
Abstract Scope Graphite as refractory materials has been dried using a vacuum annealing treatment by varying the exposure time for (0, 6, 8, 12, 24 hours) at temperature of 1000 C. The oxygen to carbon atomic ratio (O/C ratio), assessed using X-ray photoelectron spectroscopy, decreased with increase of temperature and exposure time. Wetting angles between silicon and graphite were measured for silicon droplets. It was found with a low O/C ratio, the statistic contact angle may reach 82 . In contrast, a high O/C ratio leads in angles around 27. The infiltration of silicon into the graphite was occurred during the experiments. With increasing of O/C ratio, the infiltration depth of molten silicon increased.
Proceedings Inclusion? Planned: Stand-alone book in which only your symposium’s papers would appear (indicate title in comments section below)

OTHER PAPERS PLANNED FOR THIS SYMPOSIUM

Characterization of Composition, Morphology, and Structure of Disi Raw Sandstones in Jordan
Effect of Magnesium Addition on Removal of Impurities from Silicon by Hydrometallurgical Treatment
Electrodeposition of Solar Grade Silicon on Graphite in Molten CaCl2
Electrodynamic Eddy Current Separation of End-of-Life PV Materials
Evaporation Removal of Boron in Molten Silicon Using Reactive Fluxes
Influence of Oxygen Content on the Wettability of Silicon on Graphite
Investigation on Quartz Crucibles for Monocrystalline Silicon Ingots for Solar Cells
Particle Separation in Silicon Ingot Casting Using AC Magnetic Field
Phase Analysis of the Si-O2 System
Study on Producing Solar Grade Silicon by Carbothermal Reduction of Andalusite Ore
Study on the Segregation Behavior of Impurities during Solvent Refining Process
Topological Impurity Segregation at Faceted Silicon Grain Boundaries

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