|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Characterization of Minerals, Metals, and Materials
||Microstructure and Mechanical Properties of Silicon Doped Boron Carbide
||Luoning Ma, Fatih Toksoy, Kelvin Xie, Kanak Kuwelkar, Richard Haber, Kevin Hemker
|On-Site Speaker (Planned)
Boron carbide, with its low density and superior hardness, is a promising material for personal armor applications. However, boron carbide is difficult to densify and generally exhibits poor fracture toughness. In this work, we overcame both challenges by using Si as the sintering aid. Fully dense samples were achieved by sintering B4C powder with 10 wt.% Si using spark plasma sintering. The addition of Si substantially lowered the sintering temperature. Moreover, Si reacted with free carbon, the oxide layer on the B4C powders to form ultrafine-grained SiC and SiO2. These phases distributed uniformly in the microstructure, facilitating densification by closing up of nano-pores, and improving both the hardness and fracture toughness. Also, we note that Si did not diffuse into and decompose the boron carbide grains. Instead it appears that carbon from graphite dies diffused into boron carbide and reacted with Si to form SiC.
||Planned: Stand-alone book in which only your symposium’s papers would appear (indicate title in comments section below)