Abstract Scope |
Gallium oxide (β-Ga2O3) is an ultrawide bandgap material with applications in high power electronics and optoelectronic devices. Many β-Ga2O3 dopants and alloys with attractive properties have been explored, but further studies are required to understand their effects on transport, optical, and structural properties.
β-Ga2O3 crystals were grown by the Vertical Gradient Freeze (VGF) and Czochralski methods doped with Mn, Cr, Ni, Zn, and Cu. Methods including Raman spectroscopy, Ultraviolet-Visible spectroscopy, and Laser Ablation Inductively Coupled Plasma Mass Spectrometry (LA-ICP-MS) were used to characterize these growths. Raman spectroscopy was used to reveal spatial heterogeneities off unintentional Cr3+ luminescence along Czochralski samples. Anneals were completed to understand its effect on Cr3+ luminescnce. In addition, Ultraviolet-Visible spectroscopy was performed to observe changes in the bandgap and the absorption signature characteristic to transition metals in gallium oxide. Spatial properties provide important insight on sample to sample variation for those growing devices on these substrates. |