| About this Abstract |
| Meeting |
MS&T22: Materials Science & Technology
|
| Symposium
|
Mesoscale Phenomena in Functional Polycrystals and Their Nanostructures
|
| Presentation Title |
Optimization of Metal/Ferroelectric/Insulator/Semiconductor Capacitor Toward Reliable Gate Stacks of Field-effect-transistors |
| Author(s) |
Min Hyuk Park, Younghwan Lee |
| On-Site Speaker (Planned) |
Younghwan Lee |
| Abstract Scope |
Ferroelectricity in hafnia-based ferroelectrics has attracted increasing interest since 2011, and ferroelectric field-effect-transistors (FeFETs) are considered promising for future computing paradigms. The core part of FeFETs is the metal/ferroelectric/insulator/semiconductor (MFIS) stack, and it is considered as the origin of the limited endurance and retention of FeFETs with hafnia-based ferroelectric. The problematic part of MFIS stack was suggested as the ferroelectric/semiconductor interfaces with high trap site concentration. The charge trapping in the gate oxide as well as the interfacial trap generation were the main cause of device failure. In this presentation, the interfacial engineering strategies to improve the reliability of the FeFET gate stack are presented based on our recent experimental results from MFIS capacitors.[1]
Reference
[1] S. H. Kim et al. Chem. Commun. 57 (93), 12452-12455 (2021) |