| About this Abstract |
| Meeting |
2010 TMS Annual Meeting & Exhibition
|
| Symposium
|
Pb-Free Solders and Emerging Interconnect and Packaging Technologies
|
| Presentation Title |
Current Stressing Effect on Intermetallic Compound Growth kinetics in Cu Pillar/Sn Bump |
| Author(s) |
Myeong-Hyeok Jeong, Jae-Won Kim, Gi-Tae Lim, Byoung-Joon Kim, Kiwook Lee, Jaedong Kim, Young-Chang Joo, Young-Bae Park |
| On-Site Speaker (Planned) |
Young-Bae Park |
| Abstract Scope |
Cu pillar bump makes large amount of intermetallic compound and Kirkendall void between Cu pillar and solder which can degrade electrical and mechanical reliability. Therefore, it is essential to understand the fundamental growth mechanisms of intermetallic compound and Kirkendall void. In this work, we performed kinetic studies on the Cu pillar/Sn bump structure in order to quantify the amount of intermetallic compound and Kirkendall void by using in-situ annealing and electromigration test in a scanning electron microscope chamber during current stressing conditions with current density of 3.5~7.2x104 A/cm2 at 120~180℃. The activation energy values for the growth of Cu6Sn5, Cu3Sn, and total (Cu6Sn5+Cu3Sn) IMC were found to be 0.16, 0.56 and 0.48 eV/atom, respectively. Current density exponent for transition time of IMC during current stressing was estimated to be 2.2. And also, their effects on the electrical reliability of Cu pillar bump during current stressing will be discussed in detail. |
| Proceedings Inclusion? |
Planned: Journal of Electronic Materials |