|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Emerging Interconnect and Pb-free Materials for Advanced Packaging Technology
||Effective Suppression of Thermomigration-induced Cu Dissolution in Micro-scale Pb-free Interconnects by Ag3Sn interlayer
||Gong-Lin Hong, Yu-Fang Lin, Fan-Yi Ouyang
|On-Site Speaker (Planned)
3D IC technology is the major trend of electronic packaging in microelectronic industry. Dissolution of Cu under bumping metallization (UBM) and decomposition of intermetallic compounds (IMC) induced by a temperature gradient have been reported to be serious reliability issues in 3D IC package. This study proposed to use Ag3Sn interlayer as a diffusion barrier to inhibit the thermomigration (TM) of Cu in micro-scale interconnects. To understand the effect of Ag3Sn layer on TM of Cu, two kinds of samples were introduced and compared, Cu/Ag3Sn/Sn3.5Ag/Cu and Cu/Sn3.5Ag/Cu. The results show that the dissolution of IMCs at hot end in Cu/Ag3Sn/Sn3.5Ag/Cu was slower than that in Cu/Sn3.5Ag/Cu, and the calculated JCu,TM for samples with Ag3Sn was about one-third times smaller than that in the specimen without Ag3Sn. In addition, the orientation of Sn grain was found to be strongly affected by Ag3Sn interlayer. The corresponding mechanism would be discussed and compared.
||Planned: Supplemental Proceedings volume