|About this Abstract
||Materials Science & Technology 2009
||Characterization and Modeling of Ceramic-Ceramic and Metal-Ceramic Interfaces
||Thermal Transport Across a Thin Silica Dielectric Layer
||Ryan Iutzi, Eric Landry, Alan McGaughey
|On-Site Speaker (Planned)
Molecular dynamics simulations are applied to study thermal transport across a thin amorphous silica layer sandwiched between two larger extents of crystalline silicon. While dielectric breakdown in such a layer is initiated by electron transport, the resulting electron-phonon coupling leads to large temperature gradients across very small dimensions that can be studied using atomistic simulation. The atomic interactions are modeled using an enhanced Stillinger-Weber potential. The silica layer is built using a geometry- and energy-based optimization procedure. The effect of the layer spacing on the thermal resistance of the sandwich structure is quantified using non-equilibrium simulations where a heat flux is imposed across the structure and the resulting temperature profile is measured. Equilibrium simulation is used to determine how the melting temperature of the silica layer is affected by its thickness.