|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Alloys and Compounds for Thermoelectric and Solar Cell Applications VI
||Evaluation of Co-P Diffusion Barrier for p-Bi2Te3 Thermoelectric Material
||Chun-Hsien Wang, Albert T. Wu
|On-Site Speaker (Planned)
Bi2Te3 is a well-known thermoelectric (TE) material for its excellent ZT value at low-temperature region. Solders are used for connecting TE material to the electrode. Fast reaction between the Sn from the solder and the Te from TE would form porous and mechanically weak SnTe, which is harmful to the reliability of the module. This study adopted electroless Co-P as diffusion barrier and investigated the growth kinetics of the IMCs of pure Sn, Sn-3wt%Ag-0.5wt%Cu (SAC305) solders on p-type Bi2Te3 [(Bi0.5Sb1.5)Te3]. Without Co-P layer, Bi-rich, Sn3Sb2 and SnTe phases appeared at the interfaces when aged at 150 oC. After deposition of Co layer, these phases were disappeared; only Co-Sn and Cu-Sn IMCs formed in both system. There was no Co-Te IMC formed at the interface between Co-P layer and TE material. The results imply that the electroless Co-P can be a potential candidate as the diffusion barrier for thermoelectric modules.
||Planned: Supplemental Proceedings volume