|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Alloys and Compounds for Thermoelectric and Solar Cell Applications V
||L-16: Interfacial Reactions between Indium and Bi2Te3-based Thermoelectric Materials
||Ji-min Lin, Yohanes Hutabalian, Shi-Ting Lu, Jui-shen Chang, Sinn-wen Chen
|On-Site Speaker (Planned)
P-type (Bi,Sb)2Te3 and N-type Bi2(Te,Se)3 are the most commonly used alloys in thermoelectric modules. There are numerous joints in a thermoelectric module connecting these thermoelectric P-N devices to metallic plates. Indium and indium-based solders are potential joining materials for conventional soldering and transient liquid phase bonding techniques in thermoelectric modules. Although most likely barrier layers would be used, this study investigates the interfacial reactions between indium and the Bi2Te3-based thermoelectric materials to provide fundamental understanding of the interfacial reactions in the Bi2Te3-based thermoelectric modules if no barrier layers. Very significant interfacial reactions were observed in the In/Bi2Te3, In/Bi2Se3 , In/Sb2Te3, In/(Bi,Sb)2Te3 and In/Bi2(Te,Se)3 couples reacted at 250°C. The results confirm the necessity of using barrier layers. The various undetermined compounds in the Bi-Te binary system between Bi and Bi2Te3 phases are grouped together as the (Bi2)m(Bi2Te3)n compound and similarly those in the Bi-Se system are grouped as the (Bi2)m(Bi2Se3)n compound.
||Planned: Supplemental Proceedings volume