|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Alloys and Compounds for Thermoelectric and Solar Cell Applications IV
||Surface Passivation by AlOx in c-Si Solar Cells
||Haider Ali, Kristopher O Davis, Winston V Schoenfeld
|On-Site Speaker (Planned)
Surface passivation remains a critical issue for achieving higher efficiencies in crystalline silicon (c-Si) solar cells. Aluminum oxide (AlOx) has emerged has a suitable material for passivation of both n-type and p-type Si surface. It is due to the presence of negative fixed charges in AlOx resulting in high field effect passivation and low interface defect density. In the present work, AlOx layers are deposited on p-type and n-type c-Si wafers by atomic layer deposition (ALD) under different deposition conditions. Prior to coating, the wafers are cleaned using a standard RCA cleaning procedure and then coated on both sides. As deposited wafers are then annealed under specified conditions. Finally, both the as-deposited as well as annealed wafers are then characterized for their microstructural, optical, electronic properties.
||Planned: A print-only volume