|About this Abstract
||Materials Science & Technology 2011
||MS&T'11 Poster Session
||201 MgO Tunnel Barrier for Room Temperature Spin Injection and Detection in Semiconductors
||Nathan Wheeler Gray, Ashutosh Tiwari
|On-Site Speaker (Planned)
||Nathan Wheeler Gray
We have developed a novel all-electrical technique of spin injection and detection in semiconductors using NiFe/MgO tunnel-barrier-contacts at room temperature.<sup>1</sup> In this talk, using the specific examples of Si and ZnO, we will show that by employing NiFe/MgO tunnel-barrier-contacts in a local three-point device structure, all three main operations required for a spintronic device i.e. spin injection, detection and manipulation can be accomplished at room temperature in a non-optical configuration. Carrier diffusion lengths as high as 328 nm in Si channels has been achieved using our method. These lengths are good enough to realize room-temperature spintronic devices.