| About this Abstract |
| Meeting |
Materials Science & Technology 2011
|
| Symposium
|
MS&T'11 Poster Session
|
| Presentation Title |
201 MgO Tunnel Barrier for Room Temperature Spin Injection and Detection in Semiconductors |
| Author(s) |
Nathan Wheeler Gray, Ashutosh Tiwari |
| On-Site Speaker (Planned) |
Nathan Wheeler Gray |
| Abstract Scope |
We have developed a novel all-electrical technique of spin injection and detection in semiconductors using NiFe/MgO tunnel-barrier-contacts at room temperature.<sup>1</sup> In this talk, using the specific examples of Si and ZnO, we will show that by employing NiFe/MgO tunnel-barrier-contacts in a local three-point device structure, all three main operations required for a spintronic device i.e. spin injection, detection and manipulation can be accomplished at room temperature in a non-optical configuration. Carrier diffusion lengths as high as 328 nm in Si channels has been achieved using our method. These lengths are good enough to realize room-temperature spintronic devices. |
| Proceedings Inclusion? |
Undecided |