|About this Abstract
||2010 TMS Annual Meeting & Exhibition
||Processing Materials for Properties
||Direct Reversal Imprint Lithography of Indium-Tin Oxide (ITO) Nanoparticles for Improvement of Light Extraction Efficiency of Gan Based LED Devices
||Ki-Yeon Yang, Sang-Chul Oh, Kyeong-Jae Byeon, Heon Lee
|On-Site Speaker (Planned)
Recently, light emitting diodes (LEDs) has widely used as a light source for LCD back-light, mobile display, indoor lighting source due to low power consumption, long lifetime and thin configuration. In order to develop the highly efficiency GaN based LED devices, a number of researches have been progressed for enhancement of its low light extraction efficiency. For making the most enhancement of light extraction efficiency and applying into industrial process, photonic crystal patterns must be formed by simple process with low process cost.
In this study, indium-tin oxide (ITO) nanoparticle (NP) photonic crystal patterns were formed on the ITO/GaN based blue LED substrate by direct reversal imprint lithography. And we confirmed that light extraction efficiency of GaN based blue LED with ITO NP photonic crystal patterns was drastically enhanced in relation to that of the LED without ITO NP photonic crystal patterns through analysis of photo-luminescence and electro-luminescence.
||Definite: A CD-only volume