|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Frontiers in Advanced Functional Thin Films and Nanostructured Materials
||M-17: Nitrogen Vacancy Induced Room-temperature Ferromagnetism in TiN Epitaxial Thin Films via Ultrafast Laser Melting
||Siddharth Gupta, Ritesh Sachan, Adele Moatti, Jagdish Narayan
|On-Site Speaker (Planned)
Nitrogen vacancies(nv) were generated in TiN thin films by performing nanosecond laser irradiation. The out-of-plane epitaxial relationships are (111) TiN|| (0001) Al2O3 and in-plane (-110) TiN|| (10-10) Al2O3. On lattice matching d(30-30)Al2O3 with d(-110)TiN, the in-plane strain is 13.32%. As TiN/c-Al2O3 is a large misfit system, the lattice relaxes completely via the principle of domain variation, where the 8/9 and 9/10 domains alternate creating full misfit relaxation. The isothermal M-H plots confirmed RTFM with 80 Oe coercivity and 0.54 emug-1 MS for the as-deposited film, which got enhanced to 1.28 emug-1 on laser irradiation and reduced to 0.02 emug-1 on annealing under N2. The nv were quantified via TO/TA peak ratio in the Raman which monotonically decreased on performing subsequent laser irradiation, signifying an increase in nv. The increase in the Ms upon irradiation and the decrease on N2 annealing proves that nv induce pinning centers in TiN.
||Planned: Supplemental Proceedings volume