|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Frontiers in Advanced Functional Thin Films and Nanostructured Materials
||Nitrogen Vacancy Induced Room-temperature Ferromagnetism in TiN Epitaxial Thin Films via Ultrafast Laser Melting
||Siddharth Gupta, Ritesh Sachan, Adele Moatti, Jagdish Narayan
|On-Site Speaker (Planned)
Nitrogen vacancies(n<SUB>v</SUB>) were generated in TiN thin films by performing nanosecond laser irradiation. The out-of-plane epitaxial relationships are (111)<SUB> TiN</SUB>|| (0001)<SUB> Al<SUB>2</SUB>O<SUB>3</SUB></SUB> and in-plane (-110)<SUB> TiN</SUB>|| (10-10) <SUB>Al<SUB>2</SUB>O<SUB>3</SUB></SUB>. On lattice matching d<SUB>(30-30)</SUB><SUP>Al<SUB>2</SUB>O<SUB>3</SUB></SUP> with d<SUB>(-110)</SUB><SUP>TiN</SUP>, the in-plane strain is 13.32%. As TiN/c-Al<SUB>2</SUB>O<SUB>3</SUB> is a large misfit system, the lattice relaxes completely via the principle of domain variation, where the 8/9 and 9/10 domains alternate creating full misfit relaxation. The isothermal M-H plots confirmed RTFM with 80 Oe coercivity and 0.54 emug<SUP>-1</SUP> M<SUB>S</SUB> for the as-deposited film, which got enhanced to 1.28 emug<SUP>-1</SUP> on laser irradiation and reduced to 0.02 emug<SUP>-1</SUP> on annealing under N<SUB>2</SUB>. The n<SUB>v</SUB> were quantified via TO/TA peak ratio in the Raman which monotonically decreased on performing subsequent laser irradiation, signifying an increase in n<SUB>v</SUB>. The increase in the M<SUB>s</SUB> upon irradiation and the decrease on N<SUB>2</SUB> annealing proves that n<SUB>v</SUB> induce pinning centers in TiN.
||Planned: Supplemental Proceedings volume