|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||2016 Functional Nanomaterials: Emerging Nanomaterials and Techniques for 3D Architectures
||Deposition and Characteristics of Al based Gate Dielectrics with Ozone Treatment for MoS2 Applications
||Lanxia Cheng, Jaebeom Lee, Antonio T Lucero, Youngchul Byun, Jiyoung Kim
|On-Site Speaker (Planned)
Molybdenum disulfide (MoS2) is a promising 2D semiconductor with interesting electronic properties. However, it is challenge to fabricate high-quality high-k dielectrics on MoS2 due to its chemical inertness. In this work, alternative ALD process by employing ozone as precursor has been developed to achieve good sub-10 nm film uniformity.
We investigated physiochemical interface properties and electrical performance of ozone-based high-k dielectrics grown on MoS2 surfaces. Our atomic force microscopy and low-energy ion scattering spectroscopy results show that thin and uniform Al2O3 films of ~ 5 nm can be achieved using TMA/ozone. The Raman spectra of monolayer MoS2 and ex-situ XPS investigations show no lattice disordering or changes to the chemical binding state of Mo element after ozone treatment at 200°C, suggesting it has excellent chemical resistance to ozone. Electrical characterizations indicate no device performance degradations using TMA/O3-ALD in terms of field effect mobility, on/off ratio and current densities.