|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||2016 Functional Nanomaterials: Emerging Nanomaterials and Techniques for 3D Architectures
||Anisotropic Photocurrent Response at Black Phosphorous-MoS2 p-n Heterojunctions
||Tianjiao Wang, Tu Hong, Bhim Chamlagain, Hsun-Jen Chuang, Zhixian Zhou, Ya-Qiong Xu
|On-Site Speaker (Planned)
We investigate the photocurrent generation mechanisms at a vertical p-n heterojunction between black phosphorus (BP) and molybdenum disulfide (MoS2) flakes through polarization-, wavelength-, and gate-dependent scanning photocurrent measurements. When incident photon energy is above the direct band gap of MoS2, the maximum photocurrent response occurs for the light polarization direction almost perpendicular to the MoS2 channel, suggesting direct band gap transition in MoS2 mainly contributes to the photocurrent generation at the junction. In contrast, if the incident photon energy is between the band gaps of MoS2 and BP, the photocurrent response at the junction exhibits the same polarization dependence as that at the BP-metal junction, indicating that the photocurrent signals primarily result from the direct band gap transition in BP. These fundamental studies shed light on the knowledge of photocurrent generation mechanisms in vertical two-dimensional (2D) semiconductor heterojunctions, offering a new way of engineering future 2D materials based optoelectronics devices.