|About this Abstract
||2011 TMS Annual Meeting & Exhibition
||Surfaces and Heterostructures at Nano- or Micro-Scale and Their Characterization, Properties, and Applications
||Synthesis and Characterization of Silicon Oxide Nanowires Using Nickel Nanoparticles
||Seonhee Jang, Youngil Lee, Suhwan Cho, Jung-wook Seo, Donghoon Kim, Kangheon Huh
|On-Site Speaker (Planned)
We attempt to produce silicon oxide nanowires (SiOxNWs) in a simple way without complicated deposition processes, gaseous Si containing precursors, or starting material of SiO2. Nickel (Ni) nanoparticles (NPs) were applied on Si wafer and thermally treated in a furnace. The temperature in the furnace was kept in the ranges between 900 and 1100 ℃ and a forming gas, i.e. mixture of nitrogen (N2) and hydrogen (H2) flowed through the furnace. The growth of SiOxNWs was obtained via carbothermal reduction of NiO. The SiOxNWs had widths ranging from 100 to 200 nm with length extending up to ~ 10 μm and their structure was amorphous. Ni NPs were acted as catalysts. Photoluminescence (PL) showed that blue emission spectrum was centered at the wavelength of 450 nm (2.76 eV). The details of growth mechanism of SiOxNWs and the effect of Ni NPs on the formation of SiOxNWs will be presented.
||Planned: A CD-only volume