|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XVI
||Etching Behaviors of Copper and Invar in via Hole of Copper-Invar-Copper Clad Substrate
||Jong-Chan Choi, Jinuk Lee, Hyun-Woo Kwon, Jae-Ho Lee
|On-Site Speaker (Planned)
Copper-invar-copper clad has a high electric conductivity with low thermal expansion coefficient and CIC is regarded as the future substrate to replace PCB. Similar to the conventional PCB, via hole was formed through etching process. However the difference of etching rate of CIC clad make uniform hole difficult. In this research, the etching behaviors of copper and invar at different etchants were investigated. Ferric chloride and cupric chloride were used the main etching chemicals. The etching rate is dependent on the mass flow rate as well as the concentration of etchants. OCV of each etchant was measured and compared. The etching mechanism of CIC was proposed and finally the optimum condition for the CIC via hole was obtained.
||Planned: Supplemental Proceedings volume