|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||2016 Functional Nanomaterials: Emerging Nanomaterials and Techniques for 3D Architectures
||Highly Uniform Synthesis of Large-Area, Few-Layer WSe<sub>2</sub>
||Philip Campbell, Alexey Tarasov, Corey A. Joiner, Meng-Yen Tsai, Georges Pavlidis, Samuel Graham, Jud Ready, Eric M. Vogel
|On-Site Speaker (Planned)
Recent years have seen an emerging interest in the application of two-dimensional materials in electronics. The transition-metal dichalcogenides have seen particular interest because of their semiconducting behavior and thickness-dependent electrical properties. For integration into electronics, the ability to synthesize large-area films with high uniformity is essential. Commonly used chemical vapor deposition techniques rely on nucleation initiated growth of triangular domains, usually resulting in non-uniform thickness. This work demonstrates synthesis of highly uniform, few-layer WSe<sub>2</sub> using direct selenization of e-beam evaporated W thin films. Raman maps show small variations in the peak position over large areas, indicating excellent thickness uniformity. Field-effect transistors fabricated from the wafer-scale WSe<sub>2</sub> films demonstrate uniform electrical performance with an intrinsic field-effect mobility of 10 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> at a carrier concentration of 3x10<sup>12</sup> cm<sup>-2</sup>. The unprecedented uniformity of the large-area WSe<sub>2</sub> provides a substantial step towards producing manufacturable materials compatible with conventional fabrication processes.