|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Frontiers in Materials Science, Engineering, and Technology: An FMD Symposium in Honor of Sungho Jin
||Growth of Cu6Sn5 and Cu3Sn Intermetallic Compounds on (111)-, (100)- , and Randomly-oriented Copper Films
||Yu-Jin Li, Chih Chen
|On-Site Speaker (Planned)
In this study, we fabricated three types of copper films on silicon substrates by electroplating. These Cu films are highly (111)-oriented nano-twinned copper film, highly (100)-oriented, and normal copper films without preferred orientation. The thickness of the copper film is 5 µm. Then we electroplate tin on those copper films, followed by aging tests by hot plates with 150°C 100°C, and 50°C. The results show that, the Cu-Sn IMCs grew relatively fast along tin grain boundary. However, we found that the growth of Cu-Sn IMCs was inhibited on (100)- and (111)-oriented copper films, and the graisn of IMCs grew large in randomly-oriented copper films. Thus, the morphology of the Cu-Sn IMCs was layer-type. Moreover, the IMC growth rate on (100)-oriented copper films are slower than (111)-oriented copper films. Possible reasons for the slow Cu-Sn IMC formation on (100) Cu will be presented.
||Planned: Supplemental Proceedings volume