|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Frontiers in Advanced Functional Thin Films and Nanostructured Materials
||Novel Synthesis and Characterization of Carbon-doped Cubic Boron Nitride (c-BN) by Pulsed Laser Annealing Technique
||Ariful Haque, Jagdish Narayan
|On-Site Speaker (Planned)
The discovery of the direct conversion of h-BN to single crystal c-BN by rapid heating and ultrafast quenching by using a pulsed ArF nanosecond excimer laser with 193nm wavelength has been successfully implemented to fabricate carbon-doped c-BN thin films with doping concentrations far beyond the retrograde solubility limit. These films were characterized by Raman spectroscopy, X-ray diffraction (XRD), high resolution SEM, EBSD, and electrical transport measurements. The micro Raman spectra, XRD, and EBSD patterns from the specimens provide unambiguous evidence of the epitaxial growth of phase pure c-BN. Hall measurements established n-type conductivity with the maximum mobility of ~ 4.6 cm2V-1s-1 and the resistivity vs temperature measurements confirmed semiconducting nature of the C-doped c-BN thin films. This work signifies that C can be used as an n-type dopant for c-BN semiconductor, which opens new possibilities for this material to be used in practical devices.
||Planned: Supplemental Proceedings volume