|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Accelerated Materials Evaluation for Nuclear Application Utilizing Test Reactors, Ion Beam Facilities and Integrated Modeling
||Characterizing Displacement Cascade Damage via Virtual Diffraction Techniques
||James Stewart, Remi Dingreville
|On-Site Speaker (Planned)
Characterization of the cross effects between crystallography, radiation conditions and damage accumulation during a single ion strike in thin films of Si is being investigated through simulated experimental methods. Virtual diffraction patterns of single PKA cascades with varying recoil energy in thin films of Si are generated by atomistic simulations. These models use classical algorithms from kinematic diffraction theory to create both selected-area electron diffraction (SAED) patterns and XRD line profiles within atomistic simulations. Results from the simulated images are utilized to characterize the cascade damage distributions and structures based on the changes in peak locations and intensities in electron diffraction patterns along different zone axes and peak broadening and shifting in diffraction line profiles. These results are used to draw conclusions on possible interpretations of experimental results.
||Planned: Supplemental Proceedings volume