| About this Abstract |
| Meeting |
2011 Electronic Materials Conference
|
| Symposium
|
2011 Electronic Materials Conference
|
| Presentation Title |
S7, Effect of Precursor Flow Rates on the Growth of InPSb Nanowires on InP(111)B |
| Author(s) |
Chilan Ngo, Marta Pozuelo, Matthew Mecklenburg, Hailong Zhou, Chris Regan, Robert F. Hicks, Suneel Kodambaka |
| On-Site Speaker (Planned) |
Suneel Kodambaka |
| Abstract Scope |
Group III–V semiconductors possess high carrier mobilities and small band gaps, making them an important class of materials with applications in nanoelectronics and optoelectronics. One-dimensional structures, such as nanowires, of these materials are attractive because, their properties can, in principle, be controllably tuned to realize desired functionality. Nanowires are most commonly grown from the vapor phase using an external metal catalyst via vapor-liquid-solid (VLS) or vapor-solid-solid (VSS) processes. Other variants of this approach involve the use of a sacrificial catalyst, for example the group III element, or using an oxide template. Recent studies have shown that InP and InP<SUB>1-x</SUB>Sb<SUB>x</SUB> nanostructures of desired shape, structure, and composition can be grown via metalorganic chemical vapor deposition (MOCVD) using liquid indium droplets as catalysts. Here, we focus on the influence of the metalorganic precursor flow rates on the structural and compositional evolution of InP<SUB>1-x</SUB>Sb<SUB>x</SUB> alloy nanostructures. |
| Proceedings Inclusion? |
Undecided |