| About this Abstract |
| Meeting |
2010 TMS Annual Meeting & Exhibition
|
| Symposium
|
2010 Functional and Structural Nanomaterials: Fabrication, Properties, Applications and Implications
|
| Presentation Title |
Nanowires of Phase Change Materials for Memory Applications |
| Author(s) |
Jeong-Soo Lee, Chan Hoon Park, Jung Hyun Cho, Ki Hyun Kim, Yoon-Ha Jeong, Meyya Meyyappan |
| On-Site Speaker (Planned) |
Meyya Meyyappan |
| Abstract Scope |
Nanoscale memory technologies providing an alternative to flash memory have been receiving much attention in recent years. Among them, phase change random access memory(PCRAM) has shown considerable promise in terms of endurance, programming current and other metrics and therefore is ready for market. But continued scalability, density and reduction in current for many more generations to come will have unique challenges. The nanowire(NW) form of the same phase change materials such as germanium telluride(GT), GeSbTe(GST) and indium selenide provides an alternative to tackle future challenges. First, the NW memory cell volume is inherently smaller in size thus driving the thermal budget down. Second, it is well known that nanomaterials exhibit a lower melting point relative to their bulk counterparts, which will also help to reduce the thermal budget. Other thermal properties are also favorable in the nanowire form. These aspects together will reduce the programming current needs. We have grown nanowires of the above phase change materials using a vapor-liquid-solid approach and characterized them extensively. This presentation will provide details of growth results, characterization, evidence of melting point reduction and preliminary device results for programming current and switching ratio between SET/RESET. |
| Proceedings Inclusion? |
Undecided |