 A1, Nitride Film Growth by Migration Enhanced Afterglow (MEAglow) |
| A2, Observation and Elimination of Indium Surface Segregation |
| A3, Depth Resolved Strain and Composition Studies on InGaN and AlInN Films Grown by Plasma-Assisted Molecular Beam Epitaxy |
| A4, Low Temperature p-GaN Grown by NH3-MBE |
| A5, Epitaxial Lateral Overgrowth of Aluminum Nitride by Molecular Beam Epitaxy |
| A6, Effect of Superlattices and Surfactants on AlN Homoepitaxy by MBE |
| AA1, Self-Assembled, Tensile-Strained III-V Islands on (110) and (111)A Substrates |
| AA2, Atomic Structure of InAs/InGaAsP/InP(001) Quantum Dashes and Decomposition of the InGaAsP Matrix Material |
| AA3, Photoluminescence and Thermal Carrier Activation in Type-II ZnTe/ZnSe Quantum Dots |
| AA4, Temperature Dependent Photoluminescence of Ensemble and Single InAs/InGaAlAs Quantum Dots |
| AA5, Atomic Structure and Optical Properties of Submonolayer InAs/GaAs Depositions
|
| B1, Phonon Engineering through Crystal Chemistry |
| B2, Ca3AlSb3 and Ca5Al2Sb6; Inexpensive, Non-Toxic Thermoelectric Materials
for Waste Heat Recovery |
| B3, The Impact of Nano-Inclusions Introduced by Mechanical Alloying on Thermoelectric Transport in Pb1-xSnxTe: Experimental Results and Theoretical Predictions |
| B4, Reevaluation of PbTe1-xIx as High Performance n-Type Thermoelectric Material |
| B5, The Universal Optimal Seebeck Coefficient for Maximum Power Factor |
| BB1, Local Density of States and Semimetallic Behavior of Rare Earth-V Nanoparticles Embedded in a III-V Semiconductor Matrix |
| BB2, A Simple Thermodynamic Model for the Doping and Alloying of Nanoparticles |
| BB3, Band Structure and Thermal Escape Processes of Strained InGaSb/AlGaSb Quantum Wells |
| BB4, Formation and Templating of III-V Semiconductor Nanospikes by Focused Ion Beams |
| BB5, Structural and Optical Characterization of Growth Pause Induced Ripening of InAs/GaAs Quantum Dot Heterostructures. |
| C1, Scanning Gate Spectroscopy: A New SPM Technique for Nano-Devices on Oxide Surfaces |
| C2, Measurement of Nanoscale External Quantum Efficiency of Plastic Solar Cells by Photoconductive Atomic Force Microscopy |
| C3, Role of Ethylene on Thermal and Chemical Stability of TiO2(110) |
| C4, Combined XSTM and High Resolution XRD Study for Quantitative Structural Descriptions of Type-II Superlattice IR Detectors |
| C5, In Situ Transmission Electron Microscopy and Photoluminescence Study of Ge-Core/SiGe-Shell Nanowires |
| C6, Local Strain Characterization of MEMS-Based Silicon Beams by Raman Spectroscopy |
| CC1, In Situ High-Temperature Scanning Tunneling Microscopy Studies of Graphene Growth on 6H-SiC(0001) |
| CC2, Electrical Characterization of Graphene-Semiconductor Heterojunctions |
| CC3, Correlated Conductivity and Work Function in Epitaxial Graphene |
| CC4, Response of Graphene-Based Field Effect Devices Exposed to Gamma and Neutron Irradiation |
| CC5, Surface Adsorption and Charge Transport in Epitaxial Graphene on 6H-SiC |
| CC6, Graphene Reinforced Composites as Efficient Thermal Interface Materials |
| CC7, Frequency Domain THz Characterization of Graphene |
| CC8, Charge Carrier Dynamics in Graphene: Suspended vs. Supported |
| CC9, Polariton Enhanced IR-Reflectivity of Epitaxial Graphene on SiC |
| D1, Tuning of Plasmonic Cavity Resonances Using Atomic Layer Deposition
|
| D2, Tunable Infrared Absorption of Nano Plasmonic Structures |
| D3, In Situ Spectroscopic Ellipsometric Analysis of Thin Silver Films Deposited Using DC Magnetron Sputtering and HiPIMS Techniques |
| D4, Second Harmonic Generation in a Metamaterial Resonating at Fundamental and Second Harmonic Frequencies |
| D5, Optical Dispersion of Amorphous Germanium Thin Films as a Function of Thickness and Deposition Parameters |
| D6, LATE NEWS: Optical Properties of FIB-Fabricated Metallic Nanostructure Arrays on Compound Semiconductor Surfaces |
| DD10, Characterization of L21-Ordered Full-Heusler Co2FeSi1-xAlx Alloy Thin Films Formed by Silicidation Technique Employing Silicon-on-Insulator Substrate |
| DD1, Enhanced Spin Injection and Spin Lifetimes in Graphene |
| DD2, Enhancement of Spin Torque by Proximity to Other Domain Walls |
| DD3, Spin Seebeck Effect in MnAs/GaMnAs Bilayers |
| DD4, Universal Valence-Band Picture of the Ferromagnetic Semiconductor GaMnAs Obtained by the Resonant Tunneling Spectroscopy |
| DD5, Fe3O4/GaAs Hybrid Ferromagnet/Semiconductor Nanostructures |
| DD6, Magnetic Depth Profile of Mn-Graded (Ga,Mn)As |
| DD7, Manganese-Doping of Group IV Semiconductor Surfaces and Nanostructures |
| DD9, Formation of Half-Metallic Ferromagnet Tunnel Junctions of Co2FeSi/SiOxNy/Si Using Radical Oxynitridation Technique |
| E1, Quantum Dot Red/Green/Blue/White Light-Emitting Electroluminescent Devices with a Low Turn-on Voltage and High Brightness |
| E2, Fabrication of Flexible Single-Crystal Devices on Electrically-Conductive Substrates |
| E3, A Compensation Mechanism for Flexible and Electrically Stable Solution-Processed Organic Field-Effect Transistors |
| E4, Ambipolar Charge Carrier Transport in Organic Thin Films |
| E5, Application of Vapor Forms 1-Octanethiol Coated Copper Conductive Ink for Ink-Jet Printing |
| E6, LATE NEWS: Impact of Mechanical Stress on Stability of Flexible Amorphous Silicon Thin Film Transistors |
| EE1, Quantitative Analysis of Lattice Disorder and Crystallite Size in Organic Semiconductor Thin Films, and Implications for Charge Transport |
| EE2, Following Charge-Trapping Chemical Reactions in Pentacene Films by Selective Chemical Doping and Wavelength-Resolved Electric Force Microscopy |
| EE3, Molecular Contact Doping for Organic n-Channel TFTs and Fast Complementary Circuits |
| EE4, Charge Trapping and Localization Due to Paracrystalline Disorder in High Performance Polymeric Semiconductors |
| EE5, Probing the Microstructure of Buried Polymer-Polymer Interfaces with Thin Film Transistors |
| EE6, LATE NEWS: Formation of Kirkendall Voids and its Role in the Performance of Contact to P-Type Silicon Nanowires |
| EE7, Materials Requirements for Low-Voltage Flexible Organic Transistors and Circuits |
| EE8, Organic Transistor-Based Memory |
| EE9, From Nano- to Micro-Scale Control of Crystalline Order in Soluble Small-Molecule Organic Semiconductors
|
| F1, Design and Growth of InAs Quantum Dash Based MWIR VECSELs |
| F2, Influence of Surface Patterning on Droplet Epitaxy and Photovoltaic Properties of InAs/GaAs Quatum Dots |
| F4, Visible Light Emitting Diodes Based on Self-Assembled In0.5Ga0.5As
Quantum Dots on GaP |
| F5, Large Area Growth of GaAs Solar Cell Based on Nanowire Structure |
| F6, Output Polarization Dependence of Asymmetric Current Injection VCSELs on Crystalline Direction and Ion Implantation |
| FF1, n+GaAs Sheet Resistance Saturation and Implications to BiHEMT Growth |
| FF2, Metamorphic p-i-n InGaAs Photodetectors Grown by MOCVD |
| FF3, Optimized Growth Condition and Dot Geometry in InAs/InGaAs Sub-Monolayer Quantum Dot Infrared Photodetector |
| FF4, Epitaxial Growth of InGaAs/InAlAs/InP Quantum Cascade Lasers by Metalorganic Chemical Vapor Deposition |
| FF5, GaInNAsSb Quantum Wells with Strain-Compensating GaAsP Layers for GaAs-Based 1.55 μm Lasers |
| G1, Molecular Beam Epitaxial Growth of Zn3P2/GaAs and ZnS/GaAs Heterostructures for Photovoltaics |
| G2, ZnSnN2: A New Earth-Abundant Semiconductor for Solar Energy Conversion |
| G3, Electrodeposition of Indium Sulfide Films from Organic Electrolytes |
| G4, Spatially Resolved Responses of Nanoscale Photovoltaic Model Devices |
| G5, Challenges of Hall Measurements on Low Mobility Materials and How to Overcome Them |
| GG1, Highly Polarized Spontaneous Emission from Semipolar (20-2-1) InGaN/GaN Light-Emitting Diodes |
| GG2, Characterization of Green Semipolar (20-21) GaInN/GaN Multiple Quantum Well Light-Emitting Diodes Grown on Freestanding GaN Substrate |
| GG3, Optical Emission Patterns in Semipolar (11-22) GaN Light Emitting Diodes on Planar m-Plane and Etched r-Plane Sapphire |
| GG4, Microscopic Optical Properties of Semi-/Nonpolar GaN with InGaN SQWs on Top Grown Directly on Patterned Si Substrate |
| GG5, Strain Relaxation in Semipolar Nitrides for Optoelectronic Device Applications |
| H10, Growth and Characterization of npn-GaN/InGaN/GaN Double-Heterojunction Bipolar Transistors on a Free-Standing GaN Substrate |
| H1, Quantization and Bias Effects on Gate Capacitance of Scaled GaN HFETs |
| H2, Direct Correlation between Access Region Trap Generation and Field-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors |
| H3, Temperature Dependent Off-State Degradation of AlGaN/GaN HEMTs |
| H4, Noise Measurements of Nanowire FET Sensors for Sensitivity Determination |
| H5, Piezoresistive Microcantilever with Embedded AlGaN/GaN HFET for Sensing Applications |
| H6, N-Polar GaN HEMTs Grown by MBE and MOCVD with fmax of 255 and 250 GHz, Respectively |
| H7, Flattened Transconductance (gm) in a Highly Scaled AlGaN/GaN HEMT Using a Polarization-Induced 2D/3D Hybridized Channel Design
|
| H8, Fabrication of AlGaInN/GaN Transistors with ft and fmax Exceeding 100 GHz |
| H9, Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors |
| HH10, Strain: A New Strategy of Tuning Doping Site and Type in Semiconductors |
| HH1, Surface Donors Dominate the Conductivity of In2O3 Thin Films |
| HH2, The Role of Native Point Defects in Highly n-Type Degenerate (Zn,Ga)O Films |
| HH3, High Resolution Photoluminescence Spectroscopy of Donors in Undoped and Indium-Doped ZnO Grown by Metalorganic Vapor Phase Epitaxy |
| HH4, Trap-Limited Li Diffusion in Melt Grown ZnO |
| HH5, Identification of Acceptor States in Li Doped ZnO Using Nanoscale Depth-Resolved Cathodoluminescence Spectroscopy |
| HH6, Zn(Mg,Cd)O Epitaxy for Optoelectronic Applications |
| HH7, ZnO and Al2O3 Thin Films Deposited by Plasma Enhanced Atomic Layer
Deposition and Plasma Enhanced Chemical Vapor Deposition |
| HH8, Thin Films of ZnO Prepared by Reactive Pulsed Arc Molecular Beam Deposition |
| HH9, Atom Probe Tomography of ZnO Nanowires |
| I10, Highly Ordered Vertical Silicon Nanowire Arrays Embedded in Polymer for Thin-Film Thermoelectric Devices |
| I1, A Tubular Thermoelectric Generator with Piled Conical Rings Structure |
| I3, Thermoelectric Properties of ErSb:InxGa1-xSb Thin Films Grown by MBE |
| I4, Nanoparticle Size Dependence of the Electrical, Thermal, and Optical Properties of Er-Doped In0.53Ga0.47As |
| I5, Improving Thermoelectric Power Generation Efficiency with Epitaxial TbAs/III-V Nanocomposites |
| I6, The MOCVD Growth of Erbium Antimonide Nanocomposite Embedded III-V Host Materials and Characterization for Thermoelectrics |
| I7, Cross-Plane Transport Properties of p-Type La0.67Sr0.33MnO3/LaMnO3 Perovskite Oxide Metal/Semiconductor Superlattices |
| I8,Temperature-Dependent Thermal Properties of HgCdTe Superlattices |
| I9, Development of III-Nitride Materials for Thermoelectric Applications |
| II10, Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices |
| II1, Absence of Electron Accumulation at InN(11-20) Cleavage Surfaces
|
| II2, MBE Growth Study of AlInN and AlInN/GaN Heterostructures for Intersubband Device Applications |
| II3, Room Temperature near-Infrared AlInN/GaN and AlGaN/GaN Quantum Well Photodetectors Grown by Molecular Beam Epitaxy |
| II4, Characterization of Lateral and Vertical Inhomogeneities in InAlN Grown by Plasma-Assisted Molecular Beam Epitaxy |
| II5, Electrical Tuning of InGaN Quantum Dots in GaN Photonic Crystal Cavities |
| II6, Investigation of Indium and Impurity Incorporation of InGaN Films on Polar, Nonpolar, and Semipolar GaN Orientations Grown by Ammonia MBE |
| II7, Piezoresponse Force Microscopy of InGaN/GaN Quantum Dots |
| II8, InGaN/GaN Core-Shell Nanorod Arrays Grown by Selective Area Growth for InGaN-Based Light Emitting Diodes |
| II9, Molecular Beam Epitaxial Growth and Characterization of InN Nanocolumns on GaN Templates |
| J10, Role of Defect States in Charge Transport in Semiconductor Nanowires |
| J1, Molecular Surface Passivation Effects on Indium Oxide Nanowire Transistors |
| J2, Electrically Pumped ZnO Nanowire p-n Junction Laser |
| J3, Electrical Transport Study of Schottky Barrier Based ZnO NanoWire FETs |
| J4, ZnO Nanowire-Based Field Effect Transistors with Non-Volatile Memory Function Using Mobile Protons |
| J5, Raman and Electrical Probes of Carrier Concentration in Si-Doped GaN Nanowires Grown by Plasma-Assisted MBE |
| J6, Electrodeposited InSb Nanowires: Structural Properties and Transistor Performance |
| J7, Electron Transport in One-Dimensional InAs Nanowire Transistors |
| J8, Electrical Properties of Axial and Radial Nanowire pn-Junctions – A Comparison
|
| J9, GaAs Core-Shell Nanowire-Based Vertical p-n Diodes |
| JJ1, Growth Investigations of Lattice-Matched III/V Compound Materials
on (001) Si Substrate for Optoelectronics |
| JJ2, Coalescence Phenomena in Narrow-Angle Stripe Epitaxial Lateral Overgrown InP by MOCVD |
| JJ3, Growth Habit Control of Epitaxial Lateral Overgrown InP on Si Substrates by MOCVD |
| JJ4, Integration of InAs/GaAs Nano/Micro Structures with Silicon by Selective Area Epitaxy |
| JJ5, The Electrical Nature of Structural Defects in InSb Synthesized by Molecular Beam Epitaxy on Si (100) and GaAs (100) |
| JJ6, Low Leakage Current AlGaN/GaN HEMTs on Si Substrates with Partially Mg-Doped GaN Buffer Layer by MOCVD |
| JJ7, Effect of Growth Temperature on Composition of InAlN Alloy Grown by GSMBE on Si (111)
|
| JJ8, Vapor Phase Epitaxial Growth of (211)B CdTe on Nanopatterned Si for HgCdTe Based Infrared Device Applications |
| K1, The Evolution of the SiC Power MOSFET from Lab Demonstration to Commercial Product |
| K2, A Bondable Metallization Stack that Prevents Diffusion of Oxygen and Gold into Monolithically Integrated Circuits Operating above 500 °C |
| K3, High-Low Temperature Performance of 20 A, 1200 - 1700 V 4H-SiC Power MOSFETs |
| K4, Improved Microstructure and Ohmic Contact of Nb Electrode on N-Type 4H-SiC |
| K5, Slow Thermal Emission from Traps in 4H-SiC Epilayers |
| K6, Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC Substrates and Axial Slices with Associated Stacking Faults |
| K7, Stacking Faults Originating from BPDs in High-Doped Buffer Layers |
| K8, Step Controlled Epitaxy on 4° and 1° Off-Cut 4H and 6H-SiC Substrate Using Dichlorosilane |
| K9, Defect Structures of B12As2 Single Crystalline Epitaxial Layers on Off-Axis (0001) 4H-SiC Substrates |
| KK10, Environmental Stabilization and Functionalization of ZnO Nanobridge Sensors Fabricated Using Carbonized Photoresist |
| KK1, Size Effects in Ni Catalyzed Germanium Nanowire Growth |
| KK2, Effects of Annealing on Sub-Eutectic Heteroepitaxial Growth of Germanium Nanowire on Si (111) Substrate |
| KK3, Catalyzed Vapor-Liquid-Solid Oxidation: Germanium Oxide Nanowires |
| KK4, Catalyst Proximity Effects on the Synthesis of Si Nanowires for In Situ Scanning Electron Microscope Li Intercalation Experiments |
| KK5, A-Si / Si Nanowire Hybrid Photovoltaics |
| KK6, Internal Quantum Efficiency in Nanorod LED Arrays Created by Top-Down Techniques |
| KK7, Electrochemically Deposited Branched Indium Antimonide (InSb) Nanowire Arrays as “In-Situ” Anti-Reflective Structures |
| KK8, Aligned Assembly of Nanowire Arrays with Intrinsic Control |
| KK9, Nanostructure Decorated AlGaN/GaN HEMTs for Chemical Sensing |
| L1, Single-Layer MoS2 Transistors |
| L2, Role of Optical Phonon in Graphene Nanoribbon Tunnel Transistors: Strategy for Abrupt Switching from Material's Point of View |
| L3, Fabrication of Top-Gated Sub-10 nm Epitaxial Graphene Nanoribbon FETs Using Hydrogen Silsesquioxane(HSQ) |
| L4, Semiconducting Graphene: Prospects and Challenges |
| L5, Influence of Trapped Single Charges in Single Walled Carbon Nanotube Transistor with SiNx /Al2O3 Double Wrapped Layers |
| L6, Deposition and Characterization of AlN Dielectric Films on Graphene |
| L7, Graphene as a Heat-Spreading Layer in Blue LEDs |
| L8, RCA Clean Assisted Transfer of CVD Grown Graphene |
| L9, LATE NEWS: Electrical and Materials Reliability Issues in Single-Walled Carbon Nanotube Interconnect Devices |
| LL10, 3C-Silicon Carbide Epitaxy by Means of Silicon Carbide-on-Silicon Wafer Bonding |
| LL1, Electrochemical Etched InP Porous Layer Formation for Layer Transfer |
| LL2, Ion-cut Transfer of InP-Based High Electron Mobility Transistors Using Adhesive Bonding |
| LL3, Investigation of PECVD Silicon Nitride Deposition on Porous Si |
| LL4, Double Layer Transfer Made by the Smart Cut™ Technology and Embedded Porous Silicon Layer |
| LL5, LiNbO3 Thin Single Crystal Layer Transfer by Smart Cut™ Technology |
| LL6, InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Transistors |
| LL7, Electrical Conductivity of Directly Bonded Silicon/Germanium Hetero-Structures |
| LL8, Interface Barrier Height Reduction in Wafer Bonded n-GaAs / n-GaAs by Sulfur Passivation Methods |
| LL9, Comprehensive Investigation of Ge-Si Bonded Interfaces Using Surface Activation |
| M10, Effects of Dislocations on Luminescence in m-Plane InGaN Quantum Wells |
| M1, A Defect-Based Mechanism for Efficiency Droop in Nitride Light Emitting Diodes |
| M2, Impact of Extended and Point Defects on InGaN LED Efficiency |
| M3, Effect of InxAl1-xN Electron Blocking Layer on Quantum Efficiency in Visible Light-Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition |
| M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers |
| M5, Low Dislocation Density Al0.32Ga0.68N by Overgrowth of Patterned Templates |
| M6, Enhancement of Hole Transport and Carrier Distribution in InGaN/GaN Multiple Quantum Wells by Controlling Indium Content of p-Type Layer in Visible Light-Emitting Diodes |
| M7, P-Side-Down, Ga-Polar, Green-Emitting Single Heterostructure LEDs |
| M8, Characterization of Green Semi-Polar (10-11) GaInN/GaN Light Emitting Diodes |
| M9, Optical Properties of Molecular Beam Epitaxy Grown High in Content (~20%) InGaN film Emitting in Green (540 nm) |
| MM10, Resistance and Transparency Study of Contacts to p-Type GaN |
| MM1, Surface Preparation of GaP for Regrowth on Epitaxially-Inverted Structures on Silicon |
| MM2, Oxide Surface Passivation of Ge for Optoelectronic Applications |
| MM3, Oxygen-Enhanced Wet Thermal Oxidation of In0.53Ga0.47As |
| MM4, Wet Etching Technique for Fabrication of GaSb Based Mid Infrared Single Lateral Mode Lasers |
| MM5, Fabrication of GaAs Micromechanical Resonator Arrays for Single Molecule Detection |
| MM6, Hydrogenated Amorphous Silicon-Carbon Alloy Thin Films for Uncooled Microbolometers
|
| MM7, Metal and Semiconductor Contacts (Si, V, Au) to Organic Molecules: The Fullerene Model System |
| MM8, Silicide/Silicon/Silicide nanowire Heterostructures with FET devices |
| MM9, Improved Electrical Properties of N-Contacts to N-face GaN for Vertical Light-Emitting Diodes by Laser-Annealing |
| N1, Preparation of the Red Phosphor Nanoparticle Films for the Application to Silicon Solar Cells |
| N2, GaAs Nanopillar Photovoltaics Based on Catalyst-Free Patterned Growth |
| N3, Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding |
| N4, Thin Film III-V Photovoltaics on Flexible Metal Substrates and Defect Mitigation Strategies |
| N5, LATE NEWS: Low Atomic Weight Transition Metal Doping of Co-Phased TiO2 |
| N6, Towards >15% Solar Cells on Metal Foils: Heteroepitaxial Crystal Silicon on Alumina |
| N7, High External Quantum Efficiency and Fill-Factor InGaN-Based Solar Cells Grown by NH3-MBE |
| N8, Design Principles for Light-Trapping in Thin Silicon Films with Embedded Dielectric Nanoparticles |
| N9, Single Crystalline Si Substrate Growth by Lateral Diffusion LPE Technology for PV Applications |
| New Concepts and Materials for Solar Power Conversion |
| NN10, Investigation on Activated Charcoal-Carbon Fabrics Composite Electrode Materials for Supercapacitor Application |
| NN1, Au-Molecule-GaAs Devices with Graphene Barrier Layer |
| NN2, Gap Mode Plasmonic Cavity with Coupled Organic Gain Medium |
| NN3, Conductance Statistics of Molecular Junctions
Fabricated with a Large Array of Sub-10 nm Single-Grain Au Nanodots Electrodes |
| NN4, Surface Functionalization of Si Nanowires on SOI Substrates for Biosensing Applications |
| NN5, Switching Characteristics of Nonvolatile Organic Resistive Memory Devices with Interfacial Oxide Layers Tuned by O2 Plasma Treatment |
| NN6, Synthesis and Lithium Battery Applications of Nitrogen Doped Graphene Films |
| NN7, Conformal Coating of Thin Polymer Electrolyte Layer on Nanostructured Electrode Materials for 3D Battery Applications |
| NN8, Nanostructured Co3O4 Supercapacitors via Solution Precursor Plasma Spray |
| NN9, Performance of MnO2 Crystallographic Phases in Rechargeable Lithium-Air Oxygen Cathode |
| O10, Characterization of Ultraviolet LEDs by Electrical Analysis and Laser-Based Failure Analysis Techniques |
| O1, Fabrication of UV Emitting Devices Using Vertical ZnO Nanorod Arrays on the p-GaN Films |
| O2, Low-Threshold ZnO Random Laser Diode Realized by Double Heterojunction Structure |
| O3, ZnMgO-Based Photodetectors for Short Wavelength and Light Polarization Detection
|
| O4, Fabrication and Characterization of 265 nm Light Emitting Diodes on AlN Single Crystal Substrates |
| O5, Time-Resolved Photoluminescence of AlInN/AlN Multiple Quantum Well Active Regions for Mid-UV Emitters |
| O6, Enhanced Inter-Band Tunneling by Polarization Engineering in InGaN/GaN Quantum Wells |
| O7, Effects of Polarization Interface Charge on GaN/SiC Separate Absorption and Multiplication Avalanche Photodiodes |
| O8, Low-Temperature Growth and Characterization of p-GaN and Graded p-InGaN Layers by MOCVD for Photovoltaic Applications |
| O9, Carrier Lifetimes and Recombination Phenomena in InGaN/ GaN Quantum Dot and Quantum Well LEDs: A Comparative Study |
| P1, Memristance and Current-Driven Phase Transition in Multifunctional Binary Oxide Nanodevices |
| P2, Switching Characteristics and Mechanism of Nano-Scale Memristors Based on Epitaxial ZnO Nano-Islands |
| P3, Investigation of Multi-Barrier ZnO-Schottky Contacts |
| P4, Interface Charge Characteristics of HfO2/ZnO Thin Films |
| P5, Low-Temperature Processed Schottky-Gated Field-Effect Transistors Based on Amorphous Gallium-Indium-Zinc-Oxide |
| P6, High Pressure Hydrogen Annealing of Indium-Gallium-Zinc Oxide Thin Film Transistors |
| P7, The Effect of Ga Doping on Bias Stress Stability of ZnO TFT |
| P8, Electrically Stable Amorphous InGaZnO Thin-Film Transistors and High-Gain Inverters |
| P9, Growth and Investigation of Hexagonal Zinc Oxide Microdisk Resonators |
| Q10, Growth Studies on Quaternary AlInGaN Layers for HEMT Application |
| Q1, ALD Al2O3 Thickness-Dependent Study of AlN/GaN MOS-HEMTs |
| Q2, Al2O3 Based Etch-Stop Technology for the Gate Recess in N-Polar AlGaN/GaN MIS-HEMTs with SixNy Passivation |
| Q3, MBE Regrown Ohmic Contacts with Rc of 0.15 ohm-mm in InAlN/GaN High Electron Mobility Transistor |
| Q4, Pre- and Post-Treatment Investigations of Al Oxide by Atomic Layer Deposition in Schottky Metal/Al Oxide/AlGaN/GaN MOS Diodes |
| Q5, GaN/Diamond AlGaN/GaN/AlGaN DH-HEMT Produced by Epi-Inverted Wafer Processing |
| Q6, AlxIn1-xN/GaN Heterostructures Grown by MEMOCVD |
| Q7, Lateral Confinement of Electrons and Quasi-1D Channels Based Devices |
| Q8, Polarization-Engineered GaN-Based Heterostructure for Normally-Off High-Electron Mobility Transistors |
| Q9, Tunneling Current via Dislocations in AlGaN/GaN Schottky Contacts |
| R10, Growth of III-Sb VECSELs for High-Power Continuous Wave Operation |
| R1, Improved Performance of Long-Wave Infrared InAs/GaSb Strained Layer Superlattices Detectors by Novel ZnTe Passivation |
| R2, Strain-Engineered Binary and Ternary Type-II Superlattice Structures and Photodiodes Grown by Metalorganic Chemical Vapor Deposition |
| R3, Study of Minority Carrier Lifetime and Background Carrier Concentration in GaSb-InAs Strained-Layer Superlattices and Bulk Epitaxial Layers by Optical Modulation Response
|
| R4, Increased Thermophotovoltaic Efficiencies Using a Two Dimensional Photonic Crystal Cavity |
| R5, Effect of Dislocation Density on Thermal Boundary Conductance across GaSb/GaAs Interfaces |
| R6, Low Field Electron Transport in Mixed Arsenide Antimonide Quantum-Well Heterostructures |
| R7, AlGaSb/InAs-Based Staggered Heterojunction Tunnel Diodes |
| R8, Growth and Characterization of AlInSb Metamorphic Buffers on GaSb and GaAs Substrates for the Growth of MWIR Lasers |
| R9, Optimization of MBE Growth for the Development of Mid-IR II-VI Quantum Cascade Lasers |
| S10, LATE NEWS: Two Coherent Limits in Core-Shell Semiconductor Nanowires |
| S1, Photoluminescence of Chemical Vapor Deposition-Grown Diamond Nanowires |
| S2, Properties of ErAs and ErSb Nanorods Embedded in High-Index III-V Semiconductors |
| S3, Dynamic Control of Growth Kinetics for Three-Dimensional Semiconductor Nano-Heterostructures |
| S4, Structural Characterization of InGaAs Axial Inserts in GaAs Catalyst-Free Nanopillars Grown by Selective-Area MOCVD |
| S5, Control of III-V Nanowire Epitaxy by Precursor Chemistry |
| S6, LATE NEWS: Growth and Photoluminescence of GaP/GaNP Core/Shell Nanowires on Si(111) by Gas-Source Molecular Beam Epitaxy (GSMBE) |
| S7, Effect of Precursor Flow Rates on the Growth of InPSb Nanowires on InP(111)B |
| S8, Precise Placement and Diameter Control of Catalyst-Free Molecular Beam Epitaxy Grown GaN Nanowires |
| S9, Synthesis and Fabrication of ZnTe Nanosheet Field Effect Transistors for Photonic Applications |
| T1, Epitaxial Graphene Formation on Step-Free 4H-SiC(0001) |
| T2, Effects of Substrate Orientation and Growth Environment on the Structural and Electronic Properties of Epitaxial Graphene on SiC(0001) |
| T3, High Mobility Epitaxial Graphene on Sapphire via Metal-Free CVD |
| T4, Study of Epitaxial Graphene on Non-Polar 6H-SiC Faces |
| T5, Synthesis of a Pillared Graphene Nanostructure:
A Three-Dimensional Hybrid Carbon Architecture
|
| T6, Electrochemical Graphane Conversion Using E-beam Evaporated Metals for Catalytic Enhancement |
| T7, Highly Reproducible Growth of Carbon Nanotubes for Practical Applications in Electronics |
| T8, Graphene and Carbon Nanotube Growth in Vacuum Systems |
| U10, Highly Mismatched Oxide Alloy for Photovoltaic and Photoelectrochemical Applications |
| U1, Synthesis of Ge(1-x)Snx Alloy Thin Films Using Ion-Implantation and Pulsed Laser Melting (II-PLM) |
| U2, Nitrogen Ordering in Ga(NAs) at the Atomic Scale |
| U3, A Study of MBE Grown InSb1-xNx on GaAs for Long-Wavelength IR Applications |
| U4, Highly Mismatched GaN1-xAsx Alloys across the Entire Composition Range |
| U5, Band Edge Optical Transitions in Bulk GaSbN and InAsN Dilute-Nitride Materials |
| U6, Non-Monotonic Change/Variation in the Seebeck Coefficient of GaAs1-xNx Thin Film Thermoelectrics Due to the Addition of N (x = 0.5% to 1.5%) |
| U7, GaN1-xBix: Extremely Mismatched Alloys |
| U8, Electrical and Thermal Properties of InGaBixAs1-x |
| U9, Incorporation of Bismuth into GaAs and InAs Grown by Molecular-Beam Epitaxy |
| V1, Alkanethiol Island Formation on Single Crystal Zinc Oxide Surfaces |
| V2, Improved High Efficiency Organic Solar Cells via Incorporation of a Conjugated Polyelectrolyte Interlayer |
| V3, A Systematic Approach to Solvent Selection Based on Cohesive Energy Densities in a Molecular Bulk Heterojunction System |
| V4, Structure-Function-Property Relationships of Diketopyrrolopyrrole-Based Materials for Applications in Solution Processed Organic Solar Cells |
| V5, ALD-TiO2 to Enable Si as a Corrosion Resistant Photoelectrode for Water Oxidation and in Photoelectrochemical Solar Cells |
| V6, Performance Optimization of Branched Nanowire Heterostructure-Based Photoelectrochemical Cells for Water Solar Splitting |
| V7, Layer-By-Layer Assembly of Light Harvesting Arrays for Molecular Based Solar Cells |
| V8, Low Temperature Fabrication of Hybrid Carbon Nanotube Gel as a Counter Electrode for Efficient Dye Sensitized Solar Cells |
| W10, LATE NEWS: Charge and Mobility Enhancements in Graded In-Polar InAlN/AlN/GaN Hetero-Junctions
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| W1, Shape Transformation of Nanoporous GaN by Annealing: Buried Cavities and Nanomembranes |
| W2, Bulk GaN Growth on GaN Seeds of Varying Orientations in Supercritical Basic Ammonia
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| W3, Large-Area, Free Standing GaN by an Novel Nanoetching Process and Substrate Recycling |
| W4, Effect of Strain on Effective Masses in GaN and AlN |
| W5, Quasi Equilibrium Crystal Shapes and Kinetic Wulff Plots of Gallium Nitride Grown by Hydride Vapor Phase Epitaxy |
| W6, In Situ Stress Measurements during GaN Growth on Ion Implanted AlN/Si Substrates |
| W7, Effect of Indium Surfactant on N-Polar GaN Epilayers Grown by Metalorganic Chemical Vapor Deposition |
| W8, Schottky Barrier Height and Interface Chemistry for Metals Contacted to Low Dislocation Density AlGaN Grown on C-Oriented AlN Wafers |
| W9, Generation Mechanism of Threading Dislocations in Heteroepitaxial Growth of 2H-AlN on 6H-SiC (0001) Substrates |
| X10, Epitaxial LaAlO3/SrTiO3 Heterostructures by Atomic Layer Deposition |
| X1, Gate First In0.53Ga0.47As/Al2O3 MOSFETs with In-Situ Channel Surface Cleaning
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| X2, Structure of Electronic Defects near the SiC/SiO2 Interface |
| X3, Interface State Density for Positive Band Offset Dielectrics (Al2O3, SiO2) on GaN |
| X4, Comparison of Metal Deposition Methods by CV Analysis of ALD Al2O3 on In0.53Ga0.47As |
| X5, Passivation Effects of ALD Oxides on Self-Aligned In0.53Ga0.47As/InAs/InP Vertical Tunnel FETs |
| X6, Influence of Trimethylaluminium (TMA) Exposure on the Growth and Electrical Characteristics of HfO2/In0.53G0.47As Gate Stacks |
| X7, Investigation of Electrode Roughness and High-K Dielectric Barrier on Metal-Insulator-Metal Tunnel Diode Operation |
| X9, Solution-Processed Zirconium Oxide and Integration with Zinc-Tin Oxide Thin-Film Transistors |
| Y10, Hydrogen-Related Cathodoluminescence in Mg-Doped GaN |
| Y1, The Influence of Al Composition on AlGaN Point Defect Incorporation |
| Y2, Hybrid Functional Calculations of DX Centers in AlN, GaN and AlGaN |
| Y3, Deep Traps in M-Plane GaN Grown by Ammonia MBE |
| Y4, Intrinsic Surface States and Dislocations at GaN(10-10) Surfaces Investigated by Scanning Tunneling Microscopy |
| Y5, Defect Characterization of InGaN Layer by Deep Level Transient and Optical Spectroscopies |
| Y6, Misfit Dislocation Formation in Partially Strain-Relaxed (11-22) Semipolar InGaN |
| Y7, Observation of m-Plane Slip and Relaxation Orthogonal to the Projected c-Direction in (20-21) InGaN/GaN Partially Relaxed Layers |
| Y8, Stress Mapping Analysis by Ray Tracing (SMART): A New Technique for Residual Strain/Stress Measurement of Single Crystal Material Using Synchrotron White Beam |
| Y9, Charged Basal Stacking Fault (BSF) Scattering in Wide Band-Gap Semiconductors |
| Z10, Ternary InxGa1-xAs Nanowires on Silicon Substrates:
1D Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics
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| Z1, Growth of Epitaxially-Embedded ErAs Films in GaAs |
| Z2, Improved Conductivity of GaAs-Based Tunnel Junctions Containing ErAs Nanostructures via Compositional Grading |
| Z3, Photoluminescence from the Direct Bandgap of Ge1-xSnx Alloys Grown by Molecular Beam Epitaxy |
| Z4, Fabrication and Characterization of Whispering Gallery Mode (WGM) Microdisk Resonator Based on Epitaxially Grown GeSn |
| Z5, Raman Study of Strained Ge1-xSnx Alloys |
| Z6, Study of Molecular Beam Epitaxial Grown HgCdSe for Infrared Applications |
| Z7, XMCD Measurement of Molecular Beam Epitaxy γ’-Fe4N Thin Films on LaAlO3(100) and MgO(100) Substrates |
| Z8, Sb Surfactant Use during GaInP and GaInAs Strain Relaxation |
| Z9, Sensitivity of Strained and Unstrained Structure Growth on GaAs (111)B |