| About this Abstract |
| Meeting |
2011 Electronic Materials Conference
|
| Symposium
|
2011 Electronic Materials Conference
|
| Presentation Title |
CC2, Electrical Characterization of Graphene-Semiconductor Heterojunctions |
| Author(s) |
Travis J Anderson, Karl D Hobart, Luke O Nyakiti, Virginia D Wheeler, Rachel L Myers-Ward, Boris N Feigelson, Joshua D Caldwell, Francisco J Bezares, Jennifer K Hite, Michael A Mastro, D K Gaskill, Charles R Eddy, Francis J Kub, Glenn G Jernigan |
| On-Site Speaker (Planned) |
Travis J Anderson |
| Abstract Scope |
Graphene is a 2D material, and as such it only has chemical bonds in the plane parallel to its molecular plane. Those bonds are conjugated leading to molecular orbital overlap and produce the unique physical and electrical properties typically associated with graphene. However, when graphene is grown on SiC or transferred to other substrates from Ni or Cu catalyzed growths, there is only van der Waals bonding between the graphene and the underlying surface. To date there has been few attempts to understand the properties of electron or hole transport through the graphene sheet into the underlying substrate. It has been shown in the literature however that, based on a graphene work function of 4.5-5.0 eV, a Schottky contact is formed when graphene sheets are transferred to various semiconductors, such as Si, GaAs, and SiC [1,2]. Furthermore, diamond has also been shown to form a schottky contact when grown directly on SiC [3].
In this work, we present the electrical characterization and analysis of the vertical junction formed between graphene and various semiconductors. Epitaxial graphene grown directly on n- or p-type SiC exhibits excellent rectifying behavior and low off-state leakage, <1 nA at -20V. The devices, however, display a large voltage turn-on offset of >2V and virtually no temperature dependence in the turn-on region. These properties are more characteristic of a tunneling junction rather than a Schottky contact. To further study this phenomena, investigations of the vertical transport properties of epitaxial and CVD graphene transferred to Si, GaN, and SiC, as well as graphene formed directly on these semiconductors via precipitation from Ni, will also be presented. |
| Proceedings Inclusion? |
Undecided |