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Meeting 2013 TMS Annual Meeting & Exhibition
Symposium 2013 and Beyond: Flexible Electronics
Presentation Title Electrochemical Gating and Oxide Field-effect Transistors: Switching Speed and Device Stability Issues
Author(s) Subho Dasgupta, Ganna Stoesser, Babak Nasr, Robert Kruk, Horst Hahn
On-Site Speaker (Planned) Horst Hahn
Abstract Scope The emerging field of printed/solution-processed field-effect transistors/logics on flexible substrates involves process-limitations that discourage the use of high-mobility inorganic semiconductors. Consequently, low-temperature-processed and easily-soluble organic semiconductors (OS) have always been the automatic choice, although the device mobility of OS is usually not high enough for all potential applications. Here we show that a combination of high-mobility inorganic-oxide semiconductors with electrochemical-gating approach may overcome these drawbacks. Using stable oxide-nanoparticulate dispersions/inks we can demonstrate that electronic functionalities/conductivity in ink-jet printed layers/devices can be obtained without post-annealing treatments. Additionally, the printable-grade of composite-solid-polymer-electrolyte (CSPE) reduces the operating voltage to ≤ 2 V. Experimental/computational work performed with CSPE parallel-plate-capacitors show possibility of attaining > 10 MHz switching-speed in electrochemically-gated transistors (EGFETs). Indeed, a cut-off frequency over 100 kHz has been obtained for EGFETs with high-mobility oxide-nanowire-channel devices. Long-term stability in air and a stable device performance/functionality up to a high temperature will be presented.
Proceedings Inclusion? Planned:

OTHER PAPERS PLANNED FOR THIS SYMPOSIUM

Brain Matched Magnetic Susceptibility in Metallic Alloys for Use during MR Imaging
Electrochemical Gating and Oxide Field-effect Transistors: Switching Speed and Device Stability Issues
Electrochemical Properties of Neural Interfaces on Smart, Softening Substrates
Fabricating High-Strain Capacity Conductors on Shape Memory Polymers in Metastable States to Accommodate Large Shape Changes in Flexible Electronic Devices
Flexible Organic Thin Film Transistors for Neural Interfaces
Flexible Organic Transistors on Shape Memory Polymer Substrates for Conformable Biointegrated Interfaces
Flexible, Large-Area Sensor Circuits Fabricated by Additive Printing
Graphene Coated with Titanium Nitride as Electrode Materials for Neural Interfaces
Growth Time Performance Dependence of Vertically Aligned Carbon Nanotube Supercapacitors Grown on Aluminum Substrates
High-Performance Flexible Organic Photovoltaic Cells with Amorphous ZITO Electrode
Low-Temperature Materials for a Neuromorphic Architecture
Shape Memory Polymer Substrates for Softening, 3D Neural Interfaces
Use of Compliant Materials in the Fabrication of a Flexible Utah Neural Interface Electrode Array

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