|About this Abstract
||2013 TMS Annual Meeting & Exhibition
||2013 and Beyond: Flexible Electronics
||Electrochemical Gating and Oxide Field-effect Transistors: Switching Speed and Device Stability Issues
||Subho Dasgupta, Ganna Stoesser, Babak Nasr, Robert Kruk, Horst Hahn
|On-Site Speaker (Planned)
The emerging field of printed/solution-processed field-effect transistors/logics on flexible substrates involves process-limitations that discourage the use of high-mobility inorganic semiconductors. Consequently, low-temperature-processed and easily-soluble organic semiconductors (OS) have always been the automatic choice, although the device mobility of OS is usually not high enough for all potential applications. Here we show that a combination of high-mobility inorganic-oxide semiconductors with electrochemical-gating approach may overcome these drawbacks. Using stable oxide-nanoparticulate dispersions/inks we can demonstrate that electronic functionalities/conductivity in ink-jet printed layers/devices can be obtained without post-annealing treatments. Additionally, the printable-grade of composite-solid-polymer-electrolyte (CSPE) reduces the operating voltage to ≤ 2 V. Experimental/computational work performed with CSPE parallel-plate-capacitors show possibility of attaining > 10 MHz switching-speed in electrochemically-gated transistors (EGFETs). Indeed, a cut-off frequency over 100 kHz has been obtained for EGFETs with high-mobility oxide-nanowire-channel devices. Long-term stability in air and a stable device performance/functionality up to a high temperature will be presented.