| About this Abstract |
| Meeting |
2011 Electronic Materials Conference
|
| Symposium
|
2011 Electronic Materials Conference
|
| Presentation Title |
JJ2, Coalescence Phenomena in Narrow-Angle Stripe Epitaxial Lateral Overgrown InP by MOCVD |
| Author(s) |
Nicholas H. Julian, Philip A. Mages, Stephan Kraemer, Jack Zhang, Susanne Stemmer, Steven P. DenBaars, Larry A. Coldren, Pierre Petroff, John E. Bowers |
| On-Site Speaker (Planned) |
Nicholas H. Julian |
| Abstract Scope |
The primary goals in Epitaxial Lateral Overgrowth (ELO) of one material over another are a) defect reduction and b) maximizing the amount of lateral growth vs. vertical growth. However, unless the material is very insensitive to defect concentrations, the usable size of even the largest field of ELO material will be cut in half by a coalescence front that creates defects when the two lateral growth wings converge. Work by Olsson et.al. has shown promising Photoluminescence (PL) results where HVPE-grown ELO InP on Si appears to have coalesced with a reduced number of recombination center defects<SUP>1</SUP>. One aspect of their approach involves using the so-called zipper effect<SUP>2</SUP> which relies on the idea that the coalescence defects can be eliminated if the convergence of two lateral growth fronts can be arranged to occur at certain optimal angles. This is intended to avoid simultaneous convergence at multiple points along the convergence front, as experienced by parallel lines. We have investigated the zipper effect in ELO InP by MOCVD using various growth conditions on paired ELO stripes with very narrow opening angles of 5.6° along 32 different stripe directions ranging from [‑110] to [1‑10]. This is in contrast to the usual approach of using large opening angles that maximize the amount of lateral ELO material per length of coalescence front. We observe multipoint coalescence as forming dimples or voids along the coalescence front and find that their formation occurs either when sidewall faceting is excessively pronounced, or when lateral growth velocities of two neighboring growth fronts overrun that of the vertex of their intersection. Our results illustrate the variations of mixed plane sidewall formation with lateral growth angle and explore the resultant crystallographic defects. We present SEM and TEM images showing a correlation between moderate sidewall faceting and minimization of the defects of coalescence. |
| Proceedings Inclusion? |
Undecided |