About this Abstract |
Meeting |
2023 TMS Annual Meeting & Exhibition
|
Symposium
|
Characterization of Minerals, Metals and Materials
|
Presentation Title |
Structure and Interfaces of MBE Grown Fe Thin Films on GaAs |
Author(s) |
Ramasis Goswami |
On-Site Speaker (Planned) |
Ramasis Goswami |
Abstract Scope |
Fe/GaAs is an important system to study spin injection behavior that can vary with the nature and interfaces of Fe films. Here we investigate the effect of interfacial strain on the microstructure, interfaces and phase formation behavior in epitaxially grown Fe films. To vary the strain, we have characterized Fe films of various thicknesses ranging from 10 to 1000 nm which were grown using molecular beam epitaxy on GaAs (011) and AlGaAs (001) substrates. High resolution x-ray diffraction studies reveal that films with higher thicknesses exhibit an equilibrium alpha-Fe phase, while the films with less than 10 nm thicknesses indicate the presence of delta-Fe. Transmission electron microscopy reveals the interface for 10 nm thick films has strain lobes with no interfacial phase formation for films deposited at room temperature. At higher deposition temperature, 175ºC, similar strain lobes were observed for a 10 nm thick film. |
Proceedings Inclusion? |
Planned: |
Keywords |
Characterization, Electronic Materials, Magnetic Materials |