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Meeting 2017 TMS Annual Meeting & Exhibition
Symposium Solar Cell Silicon
Presentation Title Evaporation Removal of Boron in Molten Silicon Using Reactive Fluxes
Author(s) Ye Wang, Kazuki Morita
On-Site Speaker (Planned) Ye Wang
Abstract Scope In order to optimize the B removal during slag-refining process for solar-grade silicon production, a new process for the removal of B in molten Si was proposed based on the principle of oxidized chlorination and evaporation. B can be generated and evaporated in the form of B-containing gas (BOCl) from molten Si using CaO-SiO2-CaCl2 slag system. Compared with the binary systems of CaO-CaCl2 and SiO2-CaCl2 slag, the ternary slag system CaO-SiO2-CaCl2 showed a better potential (90 pct) for B removal at 1723K for 2 hours. Moreover, the diffusion coefficient (D) of B in the slag was also determined using tube-molten pool method. Through this, it was found that the rate-limiting step of B-removal in the slag refining process is controlled by B transfer in the slag interface and surface.
Proceedings Inclusion? Planned: Stand-alone book in which only your symposium’s papers would appear (indicate title in comments section below)

OTHER PAPERS PLANNED FOR THIS SYMPOSIUM

Characterization of Composition, Morphology, and Structure of Disi Raw Sandstones in Jordan
Effect of Magnesium Addition on Removal of Impurities from Silicon by Hydrometallurgical Treatment
Electrodeposition of Solar Grade Silicon on Graphite in Molten CaCl2
Electrodynamic Eddy Current Separation of End-of-Life PV Materials
Evaporation Removal of Boron in Molten Silicon Using Reactive Fluxes
Influence of Oxygen Content on the Wettability of Silicon on Graphite
Investigation on Quartz Crucibles for Monocrystalline Silicon Ingots for Solar Cells
Particle Separation in Silicon Ingot Casting Using AC Magnetic Field
Phase Analysis of the Si-O2 System
Study on Producing Solar Grade Silicon by Carbothermal Reduction of Andalusite Ore
Study on the Segregation Behavior of Impurities during Solvent Refining Process
Topological Impurity Segregation at Faceted Silicon Grain Boundaries

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