|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Frontiers in Advanced Functional Thin Films and Nanostructured Materials
||M-14: Characterizing Nitrogen-vacancy (NV) Centers in Diamond Nanostructure Formed by Pulsed Laser Annealing Technique at Room Temperature and Ambient Pressure
||Anagh Bhaumik, Ritesh Sachan, Jagdish Narayan
|On-Site Speaker (Planned)
NV centers in diamond have remarkable optical, electrical and magnetic properties. We report a unique method for synthesis of pure and nitrogen-doped nanodiamonds at room temperatures and atmospheric pressure in air. Nitrogen-doped amorphous carbon films are deposited onto c-sapphire substrates using PLD technique and simultaneous bombardment with N2+ (0.5-1.0 KeV) ions. Subsequently, the N-doped and undoped carbon films are irradiated with nanosecond laser pulses of ArF excimer laser to form diamond micro and nanostructures. N atoms and vacancies are incorporated in the diamond lattice during the liquid phase growth. High-resolution SEM, electron backscattered diffraction (EBSD), Raman spectroscopy, electric field assisted photoluminescence spectroscopy, high-resolution TEM, and electron emission loss spectroscopy (EELS) are performed to characterize various physical properties of the nano and microstructures of doped and undoped diamond. These NV centers can be widely used in a variety of applications ranging from drug delivery to quantum computing.
||Planned: Supplemental Proceedings volume