|About this Abstract
||Materials Science & Technology 2012
||Controlled Synthesis, Processing, and Applications of Structural and Functional Nanomaterials
||Synthesis of Large-Area Few Layer Graphene Films by Rapid Heating and Cooling in a Modified APCVD Furnace
||Lamuel David, Gurpreet Singh
|On-Site Speaker (Planned)
In this work, we varied various CVD parameters and studied their effect on graphene growth on Cu and Ni substrates subjected to rapid heating/cooling cycles. The furnace was first optimized for graphene growth at atmospheric pressures following procedures available in the literature (total synthesis time of approximately 7 hours). It was later modified to accommodate fast heating (~8 °C/sec) and cooling (~4 °C/sec) of the growth substrate. Electron microscopy followed by Raman spectroscopy demonstrated successful synthesis of graphene on Cu substrate with 20 SCCM of CH4 and 300 SCCM of H2 at 950 °C. The Raman I2D/IG ratio of 0.66 suggests formation of few layer graphene (FLG) films. Hence, the overall time required for graphene synthesis on Cu was reduced from 7 hours to less than an hour. Additional experiments involving fast heating/cooling of Ni substrate produced graphitic layers (>20 layers) under all conditions.