|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Accelerated Materials Evaluation for Nuclear Application Utilizing Test Reactors, Ion Beam Facilities and Integrated Modeling
||Enhanced Dynamic Recovery of Radiation Damage in Silicon Carbide under Accelerated Testing Using Ion Beams
||William J. Weber, Eva Zarkadoula, Haizhou Xue, Yanwen Zhang
|On-Site Speaker (Planned)
||William J. Weber
Accelerated testing of materials for fission and fusion reactors requires ion beam facilities to evaluate performance at high doses. At typical ion energies, energy loss to electrons can be significant. We have employed experimental approaches to study the separate and combined effects of electronic and nuclear energy loss on irradiation response in SiC. The results demonstrate that electronic energy loss can induce dynamic self-healing in SiC at an energy deposition threshold value of 1.0 keV/nm at room temperature. The threshold energy to activate this process is 450 keV for both Si and C PKAs/ions. This process becomes more efficient with increasing irradiation temperature and could extend the performance lifetime of SiC in fusion reactors. These results have significant implications regarding the use of MeV ions to emulate neutron damage and predictively model the response of SiC to fast neutrons.
This work was supported by the U.S. DOE, BES, MSED.
||Planned: Supplemental Proceedings volume