|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Advanced Characterization Techniques for Quantifying and Modeling Deformation
||I-2: Compression Testing of Single Crystals of β-Si<sub>3</sub>N<sub>4</sub> on Micron Meter Scale by Means of FIB Machining Combined with EBSD Orientation Mapping
||Nobuyuki Kadota, Haruyuki Inui, Norihiko Okamoto, Isao Tanaka, You Zhou, Hideki Hyuga, Kiyoshi Hirao
|On-Site Speaker (Planned)
Si<sub>3</sub>N<sub>4</sub> is of technological importance because of the high strength high toughness and high thermal conductivity. Si<sub>3</sub>N<sub>4</sub> is usually used as polycrystals sintered with additives. Some slip systems operative are reported for polycrystals of β-Si<sub>3</sub>N<sub>4</sub> after high-temperature deformation. However, the critical resolved shear stress (CRSS) values for these slip systems have yet to known. This is because of the difficulty in growing single crystals of large size. Recently, compression testing has become possible to make on micron-meter scales with single crystals (usually called micropillar testing) when combined with FIB machining and EBSD orientation mapping. In this case, oriented single-crystal specimens can be machined from a grain of a sintered polycrystal so that the sip system identification and their CRSS determination can be made. We will discuss the deformation mechanism of β-Si<sub>3</sub>N<sub>4</sub> based on the results of compression experiments and calculation of γ-surface.
||Planned: Supplemental Proceedings volume