|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Advanced Characterization Techniques for Quantifying and Modeling Deformation Mechanisms
||Dislocation Characterization in a Scanning Electron Microscope Equipped with an Annular STEM Detector
||Patrick Callahan, Jean-Charles Stinville, McLean P Echlin, Eric Yao, Mike S Titus, Dan S Gianola, Samantha Daly, Tresa M Pollock
|On-Site Speaker (Planned)
TEM characterization of dislocation substructure in significant volumes of material in either conventional or STEM modes is typically time consuming and requires a specific configuration to image defects. In this study, an SEM equipped with a STEM detector has been used to study dislocations in various materials, including a polycrystalline Nickel-base superalloy, a single crystal Cobalt-base superalloy, and strontium titanate. Interference effects associated with conventional TEM like thickness fringes and bending contours are significantly reduced and intrinsic defects are imaged clearly even in regions with high density of dislocations. Simulations have been used to determine the energy distributions of transmitted electrons at an accelerating voltage of 30kV, typical of SEM imaging. The experimental and simulated results are compared to standard analyses using TEM. Defect images have been simulated for the SEM geometry, and diffraction contrast in the SEM is discussed.
||Planned: Supplemental Proceedings volume