|About this Abstract
||2016 TMS Annual Meeting & Exhibition
||Alloys and Compounds for Thermoelectric and Solar Cell Applications IV
||The Ga and In Coupling Effects in the Doping of the CoSb3 Compound
||Po-Han Lin, Sinn-wen Chen, Ssu-ming Tseng, Yinglu Tang, G. Jeffrey Snyder
|On-Site Speaker (Planned)
CoSb3, a skutterudite compound, has good thermoelectric properties, and its properties can be further enhanced with doping of gallium and indium. The solubilities of both gallium and indium in the CoSb3 compound and the ZT values of the doped CoSb3 have been determined. They are 1.0.at%Ga and 1.6at%In at 600oC and 0.7 and 1.1, respectively. When doping with gallium, the CoSb3 has the charge- compensated compound defects, and the gallium atoms reside both at the vacancies and the antimony sites. The same model is adopted to describe the defects of the indium-doped CoSb3 compound. The thermodynamic models of the Co-Ga-Sb and Co-In-Sb ternary systems are extended into Co-In-Ga-Sb quaternary system with no quaternary interaction parameters, and the solubilities of gallium and indium in the CoSb3 compound are calculated. The coupling effects of gallium and indium of the solubilities and thermoelectric properties of the CoSb3 compound are then examined.
||Planned: A print-only volume