A new form of materials processing for integrated circuit applications was demonstrated. A thick film of amorphous MoS2, deposited using pulsed magnetron sputtering, was transformed locally using a laser excitation source to produce polycrystalline MoS2, MoO2 and MoO3 by varying the laser fluence and dwell time. Each of these phases exhibit unique electrical properties and the control of these compounds through an automated laser annealing setup allows for precise patterning of electrical circuit elements. Scaling of resistor and capacitor elements in series was demonstrated in a consistent way and initial work was performed using laser annealing to form transistors. This research has potential to make complex integrated circuits that do not require a clean room and can be readily synthesized from a single precursor. Embedded circuits that are entirely laser written can revolutionize the access to electronics in contested environments, for anti-counterfeiting applications, and in structural health monitoring systems.