|About this Abstract
||Materials Science & Technology 2012
||Novel Sintering Processes and News in Conventional Sintering and Grain Growth
||Mechanical and Thermal Properties of Stacking Disordered SiC Consolidated by High Pressure SPS
||Manshi Ohyanagi, Daisuke Nakagawa, Natsuki Yamasaki, Zuhair Munir
|On-Site Speaker (Planned)
Nano-metric SiC powder with the stacking disordered structure was synthesized by mechanical alloying from elemental powders under Ar atmosphere. The disordered SiC structure was characterized by 13C-, 29Si-NMR, Raman, and XPS spectra. The powders were handled under the Ar gas with less than 2 ppm of oxygen for the subsequent consolidation. The ordering of the disordered structure to β-SiC and the remarkable densification (higher than 99.0%) simultaneously took place at 1900°C under 100 MPa during Spark Plasma Sintering without any sintering additives. However, the higher pressure in the range of 500MPa to 1GPa also led the densification without the transformation at 1700° C. The stacking disordered SiC consolidated shows the lower Vicker’s hardness, Young’s modulus, thermal conductivity and the much higher fracture toughness than β-SiC.