About this Abstract |
Meeting |
2021 TMS Annual Meeting & Exhibition
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Symposium
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Functional Nanomaterials: Functional Low-dimensional Materials (0D, 1D, 2D) Driving Innovations in Electronics, Energy, Sensors, and Environmental Engineering and Science 2021
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Presentation Title |
WSe2 Growth on Hafnium Zirconium Oxide by Molecular Beam Deposition: The Effect of Growth Conditions on the Substrate Properties |
Author(s) |
Maria Gabriela Sales, Shelby Fields, Samantha Jaszewski, Sean Smith, Riley Christopher, Nikhil Shukla, Jon Ihlefeld, Stephen McDonnell |
On-Site Speaker (Planned) |
Maria Gabriela Sales |
Abstract Scope |
Ferroelectric-based devices, such as ferroelectric field effect transistors, require contact between the ferroelectric material and a semiconducting channel. In this work, we use atomic layer deposited hafnium zirconium oxide (HZO), a ferroelectric material, and interface it with WSe2, a semiconducting transition metal dichalcogenide (TMD). We demonstrate direct growth of WSe2 on HZO substrates of different compositions through molecular beam deposition. We also show the repeatability of this growth process for different WSe2 thicknesses. The effects that the WSe2 growth process induces on the HZO substrates are investigated by performing annealing experiments in the deposition chamber with and without a selenium flux. We observe chemical, structural, and electrical changes in the HZO through X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and polarization-electric field (P-E) measurements, respectively. We find evidence of selenium incorporation into the HZO, and we explore the effects of this incorporated selenium on the ferroelectric response of HZO. |
Proceedings Inclusion? |
Planned: |
Keywords |
Electronic Materials, Thin Films and Interfaces, |