|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Computational Thermodynamics and Kinetics
||3-D Phase-field Modeling of Electromigration-induced Damage in Polycrystalline Thin Films : Grain-boundary Slit Propagation and Hillock Formation
||Arnab Mukherjee, Kumar Ankit, Britta Nestler
|On-Site Speaker (Planned)
Electromigration-induced damage in polycrystalline interconnects manifest as slit or hillock (depending on the direction of electric field), propagating along a grain boundary (GB) that intersects an external surface. A phase-field model which accounts for electron wind force and curvature-induced fluxes along the surface and GBs is developed. Using the phase-field method, we validate the numerically simulated slit-tip kinetics and width with the previous sharp interface calculations. The validated model is then extended to investigate slit propagation at grain multi-junctions. A detailed parametric study on polycrystalline thin films sheds light on the dynamics of intricate interplay between coarsening and GB slit propagation wherein multi-junctions are observed to be more susceptible to damage. Furthermore, incipient hillocks ensue GB migration which ultimately results in coarsening in polycrystalline films.
||Planned: Supplemental Proceedings volume