|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Advanced Microelectronic Packaging, Emerging Interconnection Technology, and Pb-free Solder
||Effect of Tin Orientation on Electromigration Failure of 20-um Microbumps
||Kai-Cheng Shie, Chih Chen
|On-Site Speaker (Planned)
This study examines the effects of tin grain orientations on electromigration (EM) damages on the microbumps. We used Kelvin bumps to observe the resistance change and the applied current at the same time. These bumps were pretreated as follows. Firstly, these bumps were reflowed for 15 s. Then, they were annealed at 150℃ FOR 72 h to let the grains grow. After the heat treatments, EM was conducted under a current density of 8×〖10〗^(-4) A/cm2 on the hot plate at 150℃. When the resistance increased about 5%, the current was turned off and microstructure of microbumps were observed by EBSD, EDS and SEM. With these results, the effects of tin grain orientations on EM damages can be examined systematically.
||Planned: Supplemental Proceedings volume