|About this Abstract
||2018 TMS Annual Meeting & Exhibition
||Frontiers in Advanced Functional Thin Films and Nanostructured Materials
||Functionalization of Transparent Oxide Thin Films Using Silicon Doped Nanoparticles
||Gerald Ferblantier, Fabien Ehrhardt, Corinne Ulhaq-Bouillet, Emilie Steveler, Yann Le Gall, Daniel Mathiot
|On-Site Speaker (Planned)
Silicon nanoparticles (Si-NP) are some of the most studied nanomaterials and could be of great interest in many fields such as electronics, optical sensing, data storage and biomedicine. However, it is important to control their size, shape and aggregation which are parameters related to their potential applications. In this study, we used a plasma enhanced chemical vapor deposition technique and thermal treatment for growing Si-NP. We investigated the possibility to dope these Si-NP by ion implantation. Their crystalline structure and size were assessed by energy filtered transmission electron microscopy. The distribution profile of the dopant elements within the host matrix was determined by Rutherford backscattering spectroscopy. Atom probe tomography and energy dispersive X-ray mapping, coupled with spectrum imaging on silicon plasmon, were performed to localize the dopant impurities versus the Si-NP. We showed that N-type dopant atoms were inserted into Si-NP and P-type dopant atoms were localized around the nanoparticles.
||Planned: Supplemental Proceedings volume