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Meeting 15th International Conference on Metal Organic Vapor Phase Epitaxy
Symposium 15th International Conference on Metal Organic Vapor Phase Epitaxy
Presentation Title Electroluminescense from InGaN Quantum Dots, in a Monolithically Grown GaN/AlInN Cavity
Author(s) Heiko Dartsch, Christian Tessarek, Malte Fandrich, Stephan Figge, Timo Aschenbrenner, Carsten Kruse, Detlef Hommel
On-Site Speaker (Planned) Heiko Dartsch
Abstract Scope InGaN quantum dots (QDs) and their implementation into the micro cavity of a vertical distributed Bragg reflector (DBR)-resonator structure are the key elements to achieve room temperature single photon emission required for quantum cryptography. We present an electrically driven structure based on a monolithically GaN/AlInN cavity with a single quantum dot layer grown by MOVPE. The device was grown on c-plane sapphire substrate with a GaN buffer layer. The QDs are imbedded into a GaN cavity surrounded by a 40 fold GaN/AlInN DBR below and a 10 fold GaN/AlInN DBR on top. AlInN with an indium content of 18% was used as low index material which is lattice matched to the high index GaN layers. As doping of such super-lattices is difficult whilst maintaining high reflectivity, the device was realized with an intra-cavity contact scheme. For this reason a thick 5-λ cavity was used which is Si doped in its upper half and Mg doped below the QD-layer. The QD-layer itself was grown by self organization in a 2-step growth scheme which provides reliable QD-based emission. Planar device structures were made as well as pillar structures where contacts to the both sides of the cavity were applied by focused ion beam etching and electron beam activated deposition of platinum. The center wavelength of both DBRs is located near 510nm which is at the spectral position of the low energy tail of the quantum dot ensemble. This ensures to have only few QDs in resonance with the cavity mode which is essential for single photon emission. The 40 fold bottom GaN/AlInN DBR shows a reflectivity of 97%. For the whole planar cavity structure a peak reflectivity of 92% can be observed. This presentation will discuss both growth and optical parameters of the device.
Proceedings Inclusion? Definite: Publication Outside of TMS

OTHER PAPERS PLANNED FOR THIS SYMPOSIUM

A Comparative Precursor Study of the Growth Behavior of InSb Using Metal–organic Vapor Phase Epitaxy
Algan Growth Rate and Composition in a Close-Coupled Showerhead MOVPE Reactor
AlN/GaN Heterostructures Grown by Metal Organic Vapour Phase Epitaxy with In Situ Si3N4 Passivation
Alternative Seed Particle Material for Epitaxial Growth of III/V Nanowires
Atomic Layer Epitaxy of Ternary InXGa1-XAs Layers on Inp Substrates Using Metalorganic and Hydride Precursors
Au-Catalyzed Self Assembly of GeTe Nanowires by MOCVD
Axial Pn-Junctions in Vapour-Liquid-Solid Grown GaAs Nanowires by MOVPE using DEZn and TESn
Blue-Violet Boron-Based Distributed Bragg Reflectors for VCSEL Application
Characterization and Optimization of 2-Step Epitaxial Growth for Single-Mode DFB or DBR Laser Diodes
Characterization of III-V/Si(100) Anti-Phase Domains
Characterization of the Absorbance Bleaching in Alinas/Algainas Multiple-Quantum Wells for Semiconductor Saturable Absorbers
Continuous-Flow MOVPE Growth of Position-Controlled Gan Nanorods
Cooperative Effects in the Incorporation of Nitrogen into GaAsN using Mixed Nitrogen Sources
Crystal Defect Topography of SK Dots using Atomic Force Microscopy
Deep Structural Analysis of Novel Bgan Material Layers Grown by MOVPE
Dependence of III-V Nanowire Growth by Selective Area MOCVD on the Polarity of Substrates*
Determination of Diffusion Lengths in Nanowires
Dimethylzinc Adduct Chemistry Revisited; MOCVD of ZnO Nanowires Using Oxygen Donor Adducts of Dimethylzinc
Direct Microscopic Correlation of Real Structure and Recombination Kinetics in Semipolar Grown InGaN Quantum Well Grown on of Hexagonal GaN Pyramids
Distribution and Number Control of 1.55-Ám Inas Quantum Dots on Truncated Inp Pyramids Grown by Selective Area Metal Organic Vapor Phase Epitaxy
Effect of Carbon Doping on Morphology and Structure of GaAs Nanowires
Effect of Growth Parameters on MgxZn1-xO Films Grown by Metalorganic Chemical Vapor Deposition
Effect of In-Situ Cbrcl3 Etching on the Structural Properties of Inas/Gaas Quantum Dots for Controlling Size and Density
Effect of Indium Incorporation on Optical and Structural Properties of M-Plane Ingan/Gan MQW on Lialo2 Substrates
Efficient Growth of InN films by Separate Supply of TMIn and DMHy
Electrical and Optical Characterizations of the n-InAsSb/n-GaSb Heterojunctions
Electroluminescense from InGaN Quantum Dots, in a Monolithically Grown GaN/AlInN Cavity
Epitaxial Growth of Ensembles of Indium Phosphide Nanowires on Amorphous Surfaces: Structural, Electrical, Optical Characterization, and Device Applications
Fabrication and Characterization of Inas Tubular Channel Fets Using Core-Shell Nanowires Grown By SA-MOVPE
First c-Plane Green InGaN-Laser Operating Pulsed at 531.7nm and CW at 524nm
GaN-based Laser Structure Using 3D Semipolar InGaN Quantum Wells Embedded in Planar AlGaN Cladding Layers
GaN Heteroepitaxy on High Index Silicon Substrates
GaP Nucleation on Si(001) Substrates for III/V Device Integration
Germanium Junctions Entirely Grown by MOVPE for Solar Cell Applications
Growth and Characterization of Electrically Pumped Red-Emitting VCSEL with Embedded Inp/Algainp Quantum Dots
Growth and Characterization of Green Emission A-Plane Ingan/Gan MQW Grown on Trench Epitaxial Lateral Overgrowth A-Plane Gan
Growth and Doping of InP Nanowires
Growth and Lift-Off of High-Quality Gan Epitaxial Thin Films using Self-Assembled Monolayers of Silica Microspheres
Growth and Properties of Light Emitting Diodes with an Incorporated Inmnas Ferromagnetic Layer
Growth Behavior and Defect Reduction in Hetero-epitaxial InAs and GaSb Using Block Copolymer Lithography
Growth of AlGaN and AlN on Patterned AlN/Sapphire Templates
Growth of High Quality InP layers in Si STI Trenches on Si (001) Substrates
Growth of Inas/Gaas Quantum Dots on Germanium-On-Insulator-On-Silicon (Geoi) Substrate by MOCVD With High Optical Quality at Room Temperature in the 1.3 Ám Band
Growth of Planar Semipolar (10-11) Gan on Pre-Patterned Sapphire Substrates
Growth of Semipolar (10-13) InN on M Plane Sapphire by MOVPE
Growth Of The Active Zone In Nitride Based Long Wavelength Laser Structures
Heteroepitaxial Growth of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area MOVPE
Heteroepitaxially Grown A-Plane GaN without Evidence of Basal Plane Stacking Faults in X-Ray Diffraction Measurements and Luminescence Spectra
High-Material-Efficiency Movpe of Gaas without Degradation of Photovoltaic Performances
High Optical Quality and Versatility of Pyramidal Site Controlled Quantum Dots Grown by MOVPE
High Quality AlGaN Epilayers Grown Directly on Sapphire without GaN Buffer Layer
Highly Lateral Growth of Ingaas on Si(111) with Reduced Size of Selective Growth Window
III-nitride LEDs Grown on Porous Si Substrates
III-V Semiconductor Nanowires - from Crystal Growth to Device Applications
Impact of Gas-Phase and Surface Chemistry during InGaN MOVPE
Improvement of Gaas MIS Characteristics with the Optimum Thickness of Alp In Situ Passivation Layer
In-situ Monitoring of GaAs Grown on Si(100) by Metal Organic Chemical Vapor Deposition
In situ Quantification of III-V/Si(100) Anti-Phase Domains for the Indirect Evaluation of Substrate Surfaces
InAIN Electron Blocking Layer in Visible Light-Emitting Diodes Grown by Metalorganic Chemical Vapor Deposition
InAs/GaSb Heterostructure Nanowires for Tunnel FETs
InAs/InAsP Quantum Wells on InAsyP1-y(Sb) Metamorphic Buffer Layers for Mid-IR Emission
Indium Compositional Dependence of the Two-Dimensional Electron Gas in InXAl1-XN/Aln/Gan Heterostructure Field-Effect Transistors
Influence of Sb Surfactant on Carrier Concentration in Heavily Zn-doped InGaAs Grown by MOVPE
Ingan Based True Green Laser Diodes on Novel Semi-Polar {20-21} Gan Substrates
InP/AlGaInP Quantum Dot Laser Emitting at 638 nm
Intersubband Absorption at 1.55 μM In Aln/Gan Multi Quantum Wells Grown at 770 °C by Metal Organic Vapor Phase Epitaxy using Pulse Injection Method
Intrinsic Doping Characteristics of MOVPE-Grown InAs
Investigation of AlN Buffer Layers on 6H-SiC for AlInN HEMT Grown by MOVPE
Investigation of Nitride MOVPE at High Pressure and High Growth Rates in Large Production Reactors by a Combined Modelling and Experimental Approach
Measurement of Real Wafer Temperature during Gan Growth on Sapphire and Sic
Metamorphic Growth for High Quality Lattice-Mismatched III-V Solar Cell Junctions
MOCVD Growth of Epitaxial Cugase2 Layers On Gaas by a Cuse-Assisted Continuous Two Phase Process
MOVPE Development of III/V Multijunction Terrestrial Solar Cells at Spectrolab
MOVPE Grown GaAs/AlGaAs QCLs with GaInP waveguide
MOVPE Grown InGaAsN Quantum Wires/Wells Emitting at 1.3μm
MOVPE Growth and Characterization of Non-Polar a-Plane AlxGa1-xN (0 ≤ x ≤ 1) on r-Plane Sapphire
MOVPE Growth of High Efficiency Inverted Metamorphic 1.1eV Solar Cell on Thin Ge Substrate
MOVPE Growth of Lattice Matched III/V Materials on Silicon Substrate for Optoelectronics
MOVPE of High Performance Oxide Superconducting Films on Flexible Metal Substrates
Multiple Vertically Stacked Quantum Dots, Quantum Wires and Quantum Wells of III-Nitrides by MOVPE Nano Selective Area Growth
Nanocomposite: The First Demonstration of MOCVD-Grown Rare Earth Monoantimonide Embedded in In(Ga)Sb(As) Matrices
Narrow Band Gap Material Grown by Metal Organic Vapor Phase Epitaxy (MOVPE) for Solar Cell Applications
On the Anisotropic Wafer Curvature of Gan-Based Heterostructures on Si(110) Substrates Grown by MOVPE
Optimization of Selective Area Growth Mask Shape for Fine Band-Gap Tuning in Photonic Integrated Circuits.
Ordered Planar Arrangements of MnAs Nanoclusters by Selective-Area Metal-Organic Vapor Phase Epitaxy for Lateral Magneto-Resistive Devices
P1.1 Effect of Growth Pressure on Coalescence Thickness and Crystal Quality of GaN Deposited on 4H-SiC
P1.10 Nitride Compounds of InGaN Grown by SMI H-MOVPE
P1.11 MOCVD Growth and the Transport Properties of Lattice-Matched In0.18Al0.82N/Gan Heterostructures with the Aln Interlayer
P1.12 Growth and Characterization of GaN Layer Using InN Interlayer and Sapphire Substrate
P1.13 Low Dislocation Densities GaN Epi-Layer on Nano-Scale Patterned Si(001) Substrate
P1.14 Evolution and Control of Dislocations in GaN Grown on Patterned Sapphire Substrate by Metal Organic Vapor Phase Epitaxy
P1.15 The Optical Properties and Morphology of Selective Area Growth of GaN on R-Plane Sapphire
P1.16 Study of MOCVD Growth of InGaAsSb/AlGaAsSb/GaSb Heterostructures Using Two Different Aluminium Precursors TMAl and DMEAAl
P1.17 Surface Morphology of InGaAsN Epilayer Lattice-Matched to GaAs Substrates Grown by MOVPE
P1.18 The Importance of Low-Angle Misorientation on the Optical Properties of InGaAs/AlInAs Quantum Wells
P1.19 Tellurium Doping of InGaP for Tunnel Junctions in Triple Junction Solar Cells
P1.2 Thickness Dependence of Optical and Crystal Properties of Semipolar (11-22) GaN Grown on m-Plane Sapphire without Low Temperature Buffer Layer
P1.20 InAs Quantum Dot Growth on Planar InP (100) by Metal Organic Vapor Phase Epitaxy with a Thin GaAs Interlayer
P1.21 High Growth Rate of InGaAs and InGaP Materials for Triple Junction Solar Cells
P1.22 Growth and Characterization of Heavily Selenium Doped GaAs Using MOVPE
P1.23 Cadmium Doping of InAs and InAsSb Epilayers
P1.24 Design and Simulation of a Multi-Showerhead MOVPE Reactor
P1.25 Influence of Strain Reducing Layer Type on Electroluminescence and Photoluminescence of InAs/GaAs QD Structures
P1.26 InAs/GaAs QD Capping in Kinetically or Diffusion Limited Growth Regime
P1.27 On the Luminescence of Au-Catalyst Grown GaAs-AlGaAs Core-Shell Nanowires and Its Dependence on MOVPE Conditions
P1.28 Au-Catalyzed MOVPE Growth of Vertically-Aligned GaAs Nanowires on GaAs/(111)Si Hetero-Substrates
P1.29 Alternative technique for the preparation of InAs nanowires on (110) GaAs using LP-MOVPE
P1.3 Formation of Self-Assembled GaN Nanorings by Metalorganic Vapor Phase Epitaxy
P1.30 The Study of InAs/InGaAs Dot-in-a-Well Structures for Quantum Dot Infrared Photodectectors by Metal Organic Chemical Vapor Deposition
P1.31 Growth and Characterization of npn Heterojunction Bipolar Transistors with InxGa1-xN Bases
P1.32 Improved light output power of InGaN/GaN based light-emitting diodes using silica nanospheres on patterned sapphire substrate.
P1.33 Catalyst-free InP nanowires induced by oxidized submonolayer GaAs on InP
P1.4 Effect of Ammonia Flow Rate and 70 MeV Si Ion Irradiation Induced Defects on Structural, Optical, Electrical and Device Characteristics of GaN
P1.5 Temperature Dependence of Electron Transport Properties in AlxGa1-xN/InyGa1-yN/GaN Heterostructures
P1.6 Defect Reduction of Semi-Polar GaN Grown on Nanoporous GaN Templates Prepared by Photo Enhanced Electrochemical Etching
P1.7 Growth Mechanism of (11-22) Semi-Polar GaN on m-Sapphire by MOCVD
P1.8 Electrical Properties in Cubic GaN Films Grown on GaN Buffer Layers by AP-MOVPE
P1.9 GaN Quantum Dots in p-AlGaN/GaN Superlatices without Intentional Wetting Layer
P2.1 MOVPE Technology for LEDs on 200 mm Diameter (111) Silicon
P2.10 Growth of InN Layer on Sapphire Substrate by MOCVD and the Effect of Two-Step Growth on Its Structural Properties
P2.11 Influence of Buffer Layers on the Microstructure of MOVPE-Grown a-Plane InN
P2.12 Internal Quantum Efficiency Measurement in InGaN/GaN UV LEDs with Patterned Sapphire Substrate by Electroluminescence Method
P2.13 Characterization of a-Plane GaN Layers Grown on Patterned r-Sapphire Substrate by MOCVD
P2.14 Photoluminescence Studies of Indium Nitride Films Grown on Oxide Buffer by Metalorganic Molecular-Beam Epitaxy
P2.15 Experimental Determination of the Diffusion Lengths of Trimethylindium and Related Species during Selective Area MOVPE Growth of InP
P2.16 Atomic Layer Deposition of LaAlO3 Heterostructures
P2.17 Synthesis of ZnO-Based Semiconductors by Vectored-Flow Epitaxy
P2.19 MOCVD Growth of ZnO/ZnS Core-Shell Nanowires Arrays for Photovoltaic Applications
P2.2 Growth by MOCVD of AlInGaN Structures for Optoelectronic Devices on 6 inch Substrates
P2.20 MOCVD of Nanocrystalline Zinc Oxide for Power Field Effect Transistors
P2.21 Vertically Grown ZnO Nanowires on Silicon Substrate
P2.22 Growth and Dielectric Properties of Compositionally Graded BST Films Deposited by MOCVD
P2.23 Trace Impurity Detection in Electronic Grade Arsine by Cavity-Enhanced Direct Frequency Comb Spectroscopy
P2.24 Record Spectral Purity of GaAs/AlGaAs Quantum Wells: Relevance of a Consistent Tool to Monitor MOVPE Reactor Quality
P2.26 Structural Characterization of OMVPE Grown In1-xMnxAs Epitaxial Layers
P2.27 Vapor Pressure of Erbium, Neodymium and Magnesium Based Organometallic Precursors
P2.28 MOVPE of a Metal-Cavity Surface-Emitting Laser Operating CW at Room-Temperature
P2.29 InP substrate evaluation by MOVPE growth of lattice matched epilayers
P2.3 Reduced Anisotropy in a-GaN Crystalline Quality by Metalorganic Chemical Vapor Deposition
P2.30 Quantum dots coupled to a parabolic quantum well structure for infrared photodetectors: growth, characterization and applications
P2.31 Impact of Substrate Orientation on Facet Stabilization Characteristics of III-Nitrides nanostructures
P2.32 Surface of epitaxial GaN on chemical-mechanically polished GaN (0001) substrate
P2.33 Growth of high quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%
P2.4 Influence of Reactor Pressure on the Phase Stability of Indium-Rich In1-xGaxN Epilayers
P2.5 Defect Dependence of Optical and Crystal Properties on InGaN/GaN Multiple-Quantum Well Grown on Nonpolar a-Plane (11-20) GaN Templates
P2.6 Influence of Substrate Temperature on Structural and Optical Properties of InN Epilayer Grown by RF-MOMBE with GaN Buffer Layer
P2.7 Effect of Moisture in Ammonia on LED Device Performance and Impurity Control through Liquid Extraction Total Vaporization Delivery and Purification Technologies
P2.8 Optical Properties of Non-Polar GaN Nanorod Arrays on r-Plane Sapphire with Embedded InxGa1-xN/GaN Multiple Quantum Wells
P2.9 Impact of Gradient Temperature on the Growth of InN by MOCVD
Performance Characteristics of Alingan Laser Diodes Depending on Electron Blocking Layer and Waveguide Layer Designs Grown by Metalorganic Chemical Vapor Deposition
Phosphor-Free White Light-Emitting Diodes with Height-Controlled Ingan Quantum Dots
Properties of MOVPE-Grown Vertical External Cavity Surface Emitting Laser (VECSEL) for High Power Applications in the Emission Regime from 950 Nm up to 1200 Nm
Pulsed Single-Photon Resonant Cavity Quantum Dot LED
Quaternary Alingan Layers Deposited by Pulsed Metal-Organic Vapor-Phase Epitaxy for High Efficient Light Emission
Realization of Monolithic Electro-Optically Modulated Vertical Cavity Surface Emitting Lasers
Recent Progress in Indium Gallium Nitride Based LEDs and LDs
Reduction of Threading Dislocations in Gan on In-Situ Meltback-Etched Si Substrates
Reflectance Anisotropy Spectroscopy Assessment of the MOVPE Growth of III-V Compounds on Germanium
Regrown High Quality A-Plane Gan on In Situ Etched Gan Template by MOCVD
Selective-Area Growth of InGaAs Nanowires on Si Substrate
Selective Growth of High-Quality Gan Nanowires without using a Pulsed Method
Single Quantum Well Deep-Green Leds with Buried Ingan/Gan Short-Period Superlattice
Spatially-Resolved Study of Luminescence and In Incorporation in GaN and High-In Content InGaN/GaN Nanowires
Spatio-Time-Resolved Cathodoluminescence Microscopy of Semipolar InGaN SQW on Inverse GaN Pyramids: Correlation of Real Structure and Recombination Kinetics
SSL: The Killer III-V Epi Application
Strain-Balanced MOVPE of Ingaas/Gaasp Multiple Quantum Wells using In Situ Surface Reflectance, Anisotropy and Curvature Monitoring
Strain Controlled Growth of Crack-Free Gan with Low Defect Density on Silicon (111) Substrate
Structural and Optical Properties of Site-Controlled Inas/Inp Quantum Dots Grown by Selective Area MOVPE Growth for Single Photon Source Applications
The Growth Behavior of III-V Semiconductor Nanostructures Grown by Nanoscale Selective Area MOCVD*
Time Resolved Measurement of Interfacial and Bulk Recombination of Solar Cell Materials
Uniformity of the Wafer Surface Temperature and Emission Wavelength during MOVPE Growth of Gan-Based Laser Diodes
Various Embedded Structures of InGaN LED Employing Selective MOCVD Growth
Void Shape Control in Gan Re-Grown on Hexagonally Patterned Maskless Gan
Watching the Formation of Si(100) Surfaces via In-Situ RDS for Subsequent III-V-MOVPE Preparation
Wurtzite–Zinc Blende Transition in InAs Nanowires
Wurtzite Gaas Nanoneedles Epitaxially Grown on Highly Lattice-Mismatched Sapphire with Bright Luminescence

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