|About this Abstract
||Materials Science & Technology 2011
||MS&T'11 Poster Session
||082 Phase-Field Simulation of Electric-Field-Induced Magnetic Domain Switching in Magnetic/Ferroelectric Heterostructures
||Jiamian Hu, Guang Sheng, Jingxian Zhang, Cewen Nan, Longqing Chen
|On-Site Speaker (Planned)
The phase-field method was applied to study the electric-field-induced magnetic domain switching in magnetic/ferroelectric heterostructures. The results show that the magnetic domains in magnetic thin films can be effectively switched upon applying an electric field to their adjacent ferroelectric layers, based on a combination of magnetoelastic and electromechanical couplings at the heterostructure interface. In particular, the magnetic domains in magnetic thin films can rotate from an initial in-plane to an out-of-plane direction under the action of a perpendicularly applied electric field, while a transverse electric field can induce a 90° in-plane magnetic domain switching. Typical magnetic domain structures under various external electric fields are presented. Such electric-field-induced magnetic domain switching offers interesting application potential for a novel non-volatile magnetoelectric random access memory device purely addressed by electric fields.