|About this Abstract
||Materials Science & Technology 2012
||Advances in Dielectric Materials and Electronic Devices
||Correlating the Crystal Structure and Phase Transitions with the Dielectric Properties of KxBa1-xGa2-xGe2+xO8 Solid Solutions
||Danilo Suvorov, Marjeta Macek Krzmanc
|On-Site Speaker (Planned)
In the development of novel integrated-circuit systems, single-phase glass-free LTCC materials with a high Q value are preferable. Feldspar-based ceramics have shown a variety of dielectric properties that offer the development of several new applications. Among them, the K<SUB>x</SUB>Ba<SUB>1-x</SUB>Ga<SUB>2-x</SUB>Ge<SUB>2+x</SUB>O<SUB>8</SUB> solid solutions are one of the rare high-Q (Qxf=20,000-150,000 GHz), low-permittivity (ε=5-7) ceramics that sinter at the low temperatures. The K<SUB>x</SUB>Ba<SUB>1-x</SUB>Ga<SUB>2-x</SUB>Ge<SUB>2+x</SUB>O<SUB>8</SUB> solid solutions exist in two structural modifications. The low-temperature-stable P2<SUB>1</SUB>/a phase exhibit much higher Qxf and a smaller ε compared with the high-temperature-stable C2/m phase. The temperature of the phase transformation increases with a decrease in x. The kinetics and the factors influencing the phase transition are investigated in detail and will be reported. The crystal structure of both modifications is determined by a Rietveld refinement. The difference between the P2<SUB>1</SUB>/a and C2/m structures is correlated with the phase-transition behavior and dielectric properties.