| About this Abstract |
| Meeting |
2011 Electronic Materials Conference
|
| Symposium
|
2011 Electronic Materials Conference
|
| Presentation Title |
F5, Large Area Growth of GaAs Solar Cell Based on Nanowire Structure |
| Author(s) |
Chun-Yung Chi, Anuj Madaria, Maoqing Yao, Ruijuan Li, Chongwu Zhou, Pauel Daniel Dapkus |
| On-Site Speaker (Planned) |
Chun-Yung Chi |
| Abstract Scope |
III-V compound semiconductor nanowires are expected to provide excellent performance in photovoltaic applications, because of their superior light absorption and excellent carrier transport properties. Nanowire structure can also help increase light absorption rates by re-absorbing reflected light from nanowire facets and release strain due to a dissimilar lattice constant which has made high-quality III-V compound semiconductor growth possible on a Silicon substrate. Although selective-area growth for nanowire can avoid unintentional doping from a catalyst, compared to vapor-liquid-solid growth, nano mask preparation for selective-area growth takes a long time with electron-beam lithography, which makes large area growth of noanowire difficult. We have successfully fabricated a large-area GaAs nanowire growth using a novel lithography: nano-sphere lithography. In this paper, we describe nano-sphere lithography, which can shorten the processing time of selective-area growth samples and thus make feasible the growing of large samples of nanowires , including wafer scale samples. GaAs nanowire growth on a Silicon (111) substrate has been studied: different sample treatments and growth conditions have been investigated and revealed that the atomic flatness of a Silicon substrate is essential for vertical and uniform nanowire growth. GaAs nanowire growth has also been achieved on both nano-sphere patterned and electron-beam patterned GaAs (111)B substrates. Optical results demonstrate the enhancement of light absorption with a nanowire structure, and the extent of enhancement is close to the simulation result. Electrical measurements of nanowires, including doping level and resistivity, will also be detailed in this paper. |
| Proceedings Inclusion? |
Undecided |