|About this Abstract
||2017 TMS Annual Meeting & Exhibition
||Alloys and Compounds for Thermoelectric and Solar Cell Applications V
||Phase Stability and Vacancy-site Occupation of Half-Heusler Compounds in Multi-component System M(Ni, X)Sn (M: Ti, Zr, Hf and X: Co, Ir)
||Yoshisato Kimura, Yaw Wang Chai
|On-Site Speaker (Planned)
Half-Heusler compounds are well-known high potential thermoelectric materials which can be used at relatively high temperature. We focus on the multi-component M(Ni,X)Sn (M: Ti, Zr, Hf and X: Co, Ir) system to systematically control not only excellent thermoelectric properties but also the conduction type between n and p. Objective of the present work is to understand distinctive characteristic lattice defects and interfaces formed in Half-Heusler M(Ni,X)Sn alloys, and to evaluate their effects on thermoelectric properties. These lattice defects and interfaces are formed due to the close relationship between Half-Heusler and Heusler (M(Ni,X)2Sn) in terms of crystallographic and thermodynamic similarity. Slightly Ni-rich composition of Half-Heusler leads to the nano-scaled Heusler precipitation which affects thermoelectric properties. On the other hand, Co and Ir atoms are soluble in the vacancy-site to some extent while the conduction behavior changes from n- to p-type, where M is Zr and Ti.
||Planned: Supplemental Proceedings volume